Broad-beam ion source technology and applications

Kaufman, H. R.; Robinson, R. S.

doi:10.1016/0042-207x(89)91116-0

Cited by 18 publications

(7 citation statements)

References 10 publications

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“…A schematic of an IBAD system is shown in figure 8. The ion sources used for IBAD are typically of a broad-beam design (Kaufman source) (Kaufman and Robinson 1989), while other ion sources are also used. The IBAD technique has been reviewed by Rauschenbach (2002).…”

Section: Ion Platingmentioning

confidence: 99%

Foundations of physical vapor deposition with plasma assistance

Guðmundsson

Anders

Keudell

2022

Plasma Sources Sci. Technol.

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Physical vapor deposition (PVD) refers to the removal of atoms from a solid or a liquid by physical means, followed by deposition of those atoms on a nearby surface to form a thin film or coating. Various approaches and techniques are applied to release the atoms including thermal evaporation, electron beam evaporation, ion-driven sputtering, laser ablation, and cathodic arc-based emission. Some of the approaches are based on a plasma discharge, while in other cases the atoms composing the vapor are ionized either due to the release of the film-forming species or they are ionized intentionally afterwards. Here, a brief overview of the various PVD techniques is given, while the emphasis is on sputtering, which is dominated by magnetron sputtering, the most widely used technique for deposition of both metallic and compound thin films. The advantages and drawbacks of the various techniques are discussed and compared.

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Section: Ion Platingmentioning

confidence: 99%

Foundations of physical vapor deposition with plasma assistance

Guðmundsson

Anders

Keudell

2022

Plasma Sources Sci. Technol.

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“…As mentioned in the beginning, ion beam sputtering with a second source is also applied for IBAD. The first experiments of this dual ion beam deposition were described by Weissmantel (2) rotatory cooled substrate holder, (3) substrate, (4) tube with nozzle for feeding in reactive gases, (5) quartz crystal thickness monitor, (6) screen, (7) shutter for atom beam, (8) electron beam evaporator, (9) to pump, (10) shutter for ion beam, (11) ion source.…”

Section: B Low-energy Ion Sourcesmentioning

confidence: 99%

Ion sources for ion beam assisted thin-film depositiona)

Ensinger

1992

Review of Scientific Instruments

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Section: Introductionmentioning

confidence: 99%

“…Broad beam ion source technology [1,2] relies, commonly, on three stages, namely (i) the generation of plasma, (ii) the extraction and acceleration of, usually, positive ions and (iii) the neutralization of charge space and current of the produced beam. These ion sources are used in surface processing technology [1,2] and in electric propulsion [3]. Although there are two main categories of ion sources used for electric propulsion, namely gridded ion engines (GIE) and Hall effect thrusters (HET), the neutralization scheme, in both categories, involves the use of an external electron source [4], i.e.…”

Section: Introductionmentioning

confidence: 99%

Expansion of alternatively extracted ion–ion beam in a low pressure collisional medium

Oudini

Bendib

2020

Plasma Sources Sci. Technol.

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The aim of this paper is to investigate, through particle-in-cell with Monte Carlo collisions (PIC-MCC) simulations, the effects of collisions on the expansion of an ion–ion beam formed by the alternate extraction of oppositely charged ions. This beam is extracted from an ion–ion plasma, formed in the downstream of a radiofrequency magnetically filtered iodine electronegative plasma, by the mean of two extraction grids. In this grid system, the screen grid is biased with a square voltage waveform, in the low MHz range, while the acceleration grid is grounded. The collisionless interaction between the extracted ion packets involves and enhances electrostatic waves propagating at beam velocity. Our results show that in addition to these electrostatic waves, the presence of significant fraction of low energy ions, produced by charge exchange, beside extracted fast ions gives rise to two-stream instability. Furthermore, space and time dependent electric field might accelerate the slow ions, produced by charge exchange collision. This acceleration, involving Landau damping and its inverse mechanism, is mainly due to the interaction between ions and potential patterns inherent to two-stream instability.

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Broad-beam ion source technology and applications

Cited by 18 publications

References 10 publications

Foundations of physical vapor deposition with plasma assistance

Foundations of physical vapor deposition with plasma assistance

Ion sources for ion beam assisted thin-film depositiona)

Expansion of alternatively extracted ion–ion beam in a low pressure collisional medium

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