Broad-area laser diodes with on-chip combined angled cavity

Abstract

Broad-area diode lasers usually supply high output power but low lateral beam quality. In this Letter, an on-chip combined angled cavity is proposed to realize narrow lateral far field patterns and high brightness. The influence of included angles, emitting facets on output power, and beam quality are investigated. It demonstrates that this V-junction laser is able to achieve a single-lobe far field at optimal cavity length with a 3.4 times improvement in brightness compared with Fabry-Perot (F-P) cavity lasers. The excited high-order modes at a high injection level reduce the brightness, but it is still 107% higher than that of F-P lasers.

Precise mode control of mid-infrared high-power laser diodes using on-chip advanced sawtooth waveguide designs

“…In the realm of high-power lasers, the mastery of lateral mode control has emerged as a pivotal technological advancement. A variety of approaches to control the lateral modes for low lateral far field divergence and high power output semiconductor lasers have been developed, such as photonic crystal spatial filtering [11], a phase controller [12,13], and an angled cavity [14,15]. However, most of them offer limited improvements in the sensitivity of lateral divergence to injection current, and struggle to significantly enhance lateral far field performance without noticeable compromises on output power.…”