Breaking stochastic tradeoffs with a dry deposited and dry developed EUV photoresist system

Wise, Rich

doi:10.1117/12.2585004

Cited by 14 publications

(21 citation statements)

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“…Moreover, top-down patterning methods [25][26][27]29 rely on irradiation-induced solubility change and subsequent removal of materials by dissolution. Yet, solvent-free approaches for patterning are currently at the forefront of technological needs due to their great potential in improving wafer processing efficiency and patterning quality at reduced material and energy cost 32 . Although solvent-free MOF deposition steps have been incorporated in lift-off patterning 33,34 , fully solvent-free bottom-up patterning of MOFs will further facilitate their application in microfabrication processes.…”

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confidence: 99%

Solvent-free bottom-up patterning of zeolitic imidazolate frameworks

et al. 2022

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Patterning metal-organic frameworks (MOFs) at submicrometer scale is a crucial yet challenging task for their integration in miniaturized devices. Here we report an electron beam (e-beam) assisted, bottom-up approach for patterning of two MOFs, zeolitic imidazolate frameworks (ZIF), ZIF-8 and ZIF-67. A mild pretreatment of metal oxide precursors with linker vapor leads to the sensitization of the oxide surface to e-beam irradiation, effectively inhibiting subsequent conversion of the oxide to ZIFs in irradiated areas, while ZIF growth in non-irradiated areas is not affected. Well-resolved patterns with features down to the scale of 100 nm can be achieved. This developer-free, all-vapor phase technique will facilitate the incorporation of MOFs in micro- and nanofabrication processes.

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confidence: 99%

Solvent-free bottom-up patterning of zeolitic imidazolate frameworks

et al. 2022

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“…Moreover, during wet development, pattern collapse associated with high aspect ratio structures due to capillary forces poses substantial challenge for achieving higher resolution features. Recently, Lam Research Corp. has introduced a complete dry-processing concept for EUV lithography to address the issue of pattern collapse and LWR 211 . This approach is pivoted on deposition of inorganic resist films conformally using ALD and post-exposure development to be carried out using reactive ion etching-based plasma chemistry.…”

Section: Perspectives For Euv Lithographymentioning

confidence: 99%

“…Recently, Lam Research Corp. has introduced a complete dry-processing concept for EUV lithography to address the issue of pattern collapse and LWR. 211 This approach is pivoted on deposition of inorganic resist films conformally using ALD and post-exposure development to be carried out using reactive ion etching-based plasma chemistry. High-density 9-nm half pitch features with < 3 nm LWR have been reported with this approach.…”

Section: Simplification Of Lithography Processmentioning

confidence: 99%

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Saifullah

Tiwale

Ganesan

2022

J. Micro/Nanopattern. Mats. Metro.

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Background: Metal-containing resists entered the mainstream semiconductor industry process flow to mitigate the low absorbance of extreme ultraviolet (EUV) radiation by thin films of organic resists that lead to poor sensitivity and their inability to handle rigors of development and etching conditions.Aim: The long and rich history of using metal-containing resists in electron beam lithography can offer interesting lessons, pointers, and insights to the relatively newcomer EUV lithography, which is slightly over a decade old.Approach: Electron beam lithography has been enjoying a considerable amount of freedom in the choice of resist materials for close to 50 years; especially the use of metal-containing resists to attain not only single digit nanometer resolution, higher sensitivity, and etch resistance but also lower line-edge roughness. Here, we make a comprehensive historical review of the progress made in the patterning of metal-containing resists in electron beam lithography and derive insights that can be potentially useful in EUV patterning.Perspectives: Small molecular weight resists are proven to be crucial for achieving higher resolution with low line-edge roughness. Simplifying process flow by reducing etch-stack-layers is conceivable with metal-containing resists, along with direct-patterning of functional materials for heterogeneous integration. Efficient contact hole patterning at tighter pitches may be incumbent on progress in positive-tone resist research.

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“…9 Recently, vapor-phase deposition has been demonstrated as a prominent technique to apply highly homogenous inorganic-organic thin film for EUV resist applications since it offers various advantages in terms of homogeneity, precise thickness at atomic-scaled level, and conformal coating when compared to conventional spin-coating methods. 10,11 Nevertheless, due to the extreme expense of a EUV source, there is a lack of fundamental understanding of interactions between EUV photons and hybrid thin film systems. In this study, we employ a cost-effective electron gun at low energy levels to mimic exposure conditions under a EUV source.…”

Section: Introductionmentioning

confidence: 99%

Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD)

Hwang

Woo

et al. 2022

International Conference on Extreme Ultraviolet Lithography 2022

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Herein, we investigated the chemical reactions associated with low-energy electron exposures on an inorganic-organic hybrid thin film system deposited using molecular atomic layer deposition (MALD) for EUV photoresist applications. Using the hybrid thin films consisting of trimethylaluminum (TMA) and hydroquinone (HQ), we determined the critical doses and thickness contrast of the hybrid materials at various electron energies (up to 400 eV). The custom-built in-situ Fourier-Transform Infrared (FTIR) spectroscopy system, equipped with an electron flood gun and gas residual analyzer (RGA), was employed to monitor the chemical changes induced by low-energy electrons in the hybrid thin films. Based on the in-situ FTIR and RGA results, potential chemical reaction mechanisms responsible for the change in solubility of the TMA/HQ material are proposed.

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Breaking stochastic tradeoffs with a dry deposited and dry developed EUV photoresist system

Cited by 14 publications

References 0 publications

Solvent-free bottom-up patterning of zeolitic imidazolate frameworks

Solvent-free bottom-up patterning of zeolitic imidazolate frameworks

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD)

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