Breakdown Voltage Impact on Lifetime of 1200V IGBT modules under H3TRB-HVDC Testing

Deng, Haitao; Meng, JinLei; Wang, Daniel-Bo; Zhang, Wenliang

doi:10.1109/ipfa47161.2019.8984824

Cited by 4 publications

(3 citation statements)

References 6 publications

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“…Where possible, the control software can be also linked to the test chamber, in order to continuously monitor both humidity and temperature levels, which must be kept under control during the whole duration of the test. Moreover, an overcurrent limit is usually set to prevent extended damage in case of DUT failure [19], and active leakage monitoring can also be configured in order to remove device bias in cases of high leakage drift beyond a previously set value, so that critical failure is avoided and fine failure analysis can be carried out on the samples [8]. The testing procedure is generally performed as follows: the DUTs are tested with a curvetracer in order to obtain their reverse I-V characteristics, and are then positioned in the climatic chamber and integrated in the test circuitry.…”

Section: Test Setup and Proceduresmentioning

confidence: 99%

“…The leakage curve has an initial steep increasing trend, later evolving into an asymptotic decreasing behavior, which is probably caused by charge relocation inside the DUT and is not related to the typology of the device-for instance, there are metal oxide semiconductor field effect transistors (MOSFETs), insulated gate bipolar transistors (IGBTs), power diodes, etc. [7][8][9]19,21]. This behavior is always present, but no literature specifically addresses a model for this phenomenon.…”

Section: Leakage Current Monitoringmentioning

confidence: 99%

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High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances

Cimmino

Ferrero

2020

Electronics

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The high voltage temperature humidity bias test (HV-THB) has become increasingly popular for evaluating the performances of power semiconductor devices. Given the new challenges of the power semiconductor industry, several applications and devices need to be designed to withstand harsh environments during working operations, with a remarkable focus on high-humidity conditions. The HV-THB test allows one to activate and study different failure mechanisms which were not highlighted by the standard low voltage THB test, enabling new designs in several energy conversion fields, such as energy harvesting, industry and automotive applications. After a brief introduction of current test standards, this work goes through the current methodologies and state-of-the-art of the HV-THB test. The following sections are then dedicated to the knowledge about the failure mechanisms and the models for accelerated testing. Eventually, there is a section devoted to the main passivation materials in order to understand their effects on the HV-THB capabilities of the devices.

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Section: Test Setup and Proceduresmentioning

confidence: 99%

Section: Leakage Current Monitoringmentioning

confidence: 99%

High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances

Cimmino

Ferrero

2020

Electronics

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“…The presence of high ambient temperature can further accelerate corrosion once moisture is present in the package [13]. Several works have evaluated Si IGBT modules and discrete devices using the H 3 TRB test [14][15][16] to identify characteristics that help estimate the remaining lifetime. Electrochemical corrosion and electrochemical migration were the primary failure mechanisms of these Si IGBTs [16].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of GaN HEMTs in H3TRB Reliability Testing

et al. 2022

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Gallium Nitride (GaN) power devices can offer better switching performance and higher efficiency than Silicon Carbide (SiC) and Silicon (Si) devices in power electronics applications. GaN has extensively been incorporated in electric vehicle charging stations and power supplies, subjected to harsh environmental conditions. Many reliability studies evaluate GaN power devices through thermal stresses during current conduction or pulsing, with a few focusing on high blocking voltage and high humidity. This paper compares GaN-on-Si High-Electron-Mobility Transistors (HEMT) device characteristics under a High Humidity, High Temperature, Reverse Bias (H3TRB) Test. Twenty-one devices from three manufacturers were subjected to 85 °C and 85% relative humidity while blocking 80% of their voltage rating. Devices from two manufacturers utilize a cascade configuration with a silicon metal-oxide-semiconductor field-effect transistor (MOSFET), while the devices from the third manufacturer are lateral p-GaN HEMTs. Through characterization, three sample devices have exhibited degraded blocking voltage capability. The results of the H3TRB test and potential causes of the failure mode are discussed.

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Experimental and Theoretical Study on failure mechanism of Superjunction MOSFET under H3TRB Testing

Zhou,

Ren,

Ren

et al. 2024

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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Breakdown Voltage Impact on Lifetime of 1200V IGBT modules under H3TRB-HVDC Testing

Cited by 4 publications

References 6 publications

High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances

High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances

Evaluation of GaN HEMTs in H3TRB Reliability Testing

Experimental and Theoretical Study on failure mechanism of Superjunction MOSFET under H3TRB Testing

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