Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate

Xie, Gang; Xu, E.; Lee, J.; Hashemi, Niloufar; Ng, Wai Tung; Zhang, Bo; Fu, Fred

doi:10.1109/ispsd.2012.6229090

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…(R ON, SP ) [4][5][6][7][8]. Second, the electric field peak in close proximity to the p-GaN gate exacerbates the excitation of hot electrons, which could be entrapped by the surface states at the interface between barrier and passivation layers, leading to virtual-gate effect as well as current collapse [9,10].…”

Section: Introductionmentioning

confidence: 99%

Study on a p-GaN HEMT with composite passivation and composite barrier layers

Cheng,

Wang,

Liu

et al. 2024

Semicond. Sci. Technol.

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A novel structure of p-GaN high-electron-mobility transistor (HEMT) is proposed and studied. It features two composite layers. One is the composite passivation (CP) layer consisting of Si3N4 and high-permittivity (HK) film. The other is a composite barrier (CB) layer consisting of Al x Ga1−x N/AlN/Al0.23Ga0.77N. Due to the coordinated effect of CP and CB, the specific on-resistance (R ON, SP) can be reduced under the premise of ensuring breakdown voltage (BV). Meanwhile, since the HK film in CP introduces a mechanism to automatically compensate the hot electrons trapped by surface states, the current collapse effect could be suppressed. According to the simulation results, in comparison with the conventional p-GaN HEMT, the proposed one using TiO2 as the HK material and using Al-component of 0.35 for Al x Ga1−x N gains a 29.5% reduction in R ON, SP while getting a 9.8% increase in BV, which contributes to a 50.5% decrease in the energy loss during one cycle at 200 kHz. It is also demonstrated by the simulation results that the current collapse in the proposed device is reduced by 28.6%. Thereby, a promising p-GaN HEMT with improved performance and reliability is invented.

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Section: Introductionmentioning

confidence: 99%

Study on a p-GaN HEMT with composite passivation and composite barrier layers

Cheng,

Wang,

Liu

et al. 2024

Semicond. Sci. Technol.

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show abstract

“…The breakdown voltage (BV) of the GaN HEMT is far below its theoretical limit because the E-field crowding causes premature breakdown at the edge of gate. To solve this problem, several technologies have been adopted, including field plate (FP) [10,11], RESURF technology [12,13] and polarization junction concept [14,15]. However, there is also a tradeoff relationship between the high BV and I d, sat , owning to the assisted depletion on the 2DEG of the drift region.…”

Section: Introductionmentioning

confidence: 99%

High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

et al. 2022

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A novel double gates flip-structure enhancement-mode (E-mode) high electron mobility transistor with step field plate (DFF HEMT) is proposed. It features face-to-face double gates, including a top trench MIS gate with a step field plate and a bottom planar MIS gate, which is shorted together. In the on-state, the double gates not only can restore the 2DEG by the higher electric potential, but also can form the electron accumulation layers, and thus increase the saturation output current and reduce the on-resistance. The face-to-face double gates together deplete the 2DEG by using the work function difference to realize E-mode, instead of by etching the AlGaN layer under the gate for the conventional MIS gate E-mode HEMT. The double-gate structure not only avoids etch damage, but also maintains both high threshold voltage and low on-resistance. Meanwhile, the step gate field plate modulates E-field distribution to increase the BV. In order to easily fabricate, the trench gate with step field plate must be located on the top of device, forming the flip-structure. The flip-structure is also beneficial to decrease the leakage current in the substrate. The simulated Vth, BV and Id of the DFF HEMT are 0.8 V, 465 V and 494 mA/mm, respectively. The FOM of the DFF HEMT is 79.8% and 444.2% higher than those of the conventional MIS-FP HEMT and MIS HEMT.

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Drift Effects in GaN High-Voltage Power Transistors

Würfl

2016

Power Electronics and Power Systems

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Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate

Cited by 4 publications

References 10 publications

Study on a p-GaN HEMT with composite passivation and composite barrier layers

Study on a p-GaN HEMT with composite passivation and composite barrier layers

High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

Drift Effects in GaN High-Voltage Power Transistors

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