Breakdown of Lead Zirconate Titanate Ceramics Caused by the Application of Electric Field

Abstract

Very pure lead zirconate titanate ceramics were prepared for an accurate determination of the characteristic values of piezoelectric properties. The ceramics were sufficiently matured by using pulverized calcined powders and by sintering with a gradual rise in temperature. Electromechanical activity of the ceramics became maximum when the ceramics were subected to poling at 100•Ž with a field intensity of 40 kV/cm for 10 min. Deterioration gave rise to the breakdown of ceramics along grain boundaries when the field intensity and the time of poling increased. Breakdown predominated in the ceramics belonging to tetragonal symmetry. Breakdown seems to be caused by a decrease of intergranular binding strength, and this assumption was confirmed by measurement of the bending strength and observation of the fracture.

High-Tc/high-coupling relaxed PZT-based single crystal thin films

“…Figure 1 presents a phase diagram of the bulk PMnN-PZT ceramics. 16 Prototype PZT thin films were also grown to attain a better understanding of the PMnN-PZT thin films. The chemical compositions of the sputtered PZT-based thin films are superposed in Fig.…”

Influence of Microcracking and Slow Crack Growth on the Planar Coupling Coefficient in PZT

“…Takahashi et a1. 9 have reported•that when undoped Pb(Zr 0 • 52 Ti 0 • 48 }o 3 with density 7.7-7.8 g/cm 3 and grain size of 22 •JJm was p'oled at 100°C with a field of 4 KV/mm, kp increased as time increased, reached a maximum value of 0.61 when poled for 10 minutes and then decreased to 0.58 when poled for 60 minutes. On poling with a field of 5 KV/mm, kp increased as time increased and reached a maximum va~lue .of 0.56 when poled for 60 minutes.…”

High coupling piezoelectric thin films of Pb(Zr,Ti)O3-based ternary perovskite compounds for GHz-range film bulk acoustic resonators

“…The coupling slightly decreases with the doping of PMnN similar to bulk ceramics. 3 In 0.1PMnN-0.9PZT͑55/45͒ thin film, k t and Q m were 0.619 and 185, respectively.…”

“…͑Х25%͒ and high Q m ͑Ͼ1000͒. 2,3 However, it is not clear whether the bulklike large k t 2 and Q m will be reproduced in PZT-based piezoelectric thin films needed for GHz FBAR structures. The typical thickness of piezoelectric thin films is 200-300 nm and piezoelectric thin films exhibit microstructures with dislocated interfacial structures.…”