Breakdown Mechanisms in β-Ga2O3 Trench-MOS Schottky-Barrier Diodes

Moule, Taylor; Dalcanale, Stefano; Kumar, Ajay; Uren, Michael J.; Li, Wenshen; Nomoto, Kazuki; Jena, Debdeep; Xing, Huili Grace; Kuball, Martin

doi:10.1109/ted.2021.3130861

Cited by 12 publications

(2 citation statements)

References 17 publications

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“…Trapping effects in conjunction with self-heating has been found to further degrade the high-power performance in these transistors [23]. Additional traps are found to be generated during OFF state stress of β-Ga 2 O 3 devices, power or RF devices [24]. This could potentially worsen the self-heating effects in ON state for uses of β-Ga 2 O 3 in power devices.…”

Section: State-of-the-art Ultra-wide-bandgap Devicesmentioning

confidence: 99%

$\beta$-Ga₂O₃ in Power Electronics Converters: Opportunities & Challenges

Jahdi,

Kumar,

Deakin

et al. 2024

IEEE Open J. Power Electron.

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In this work, the possibility of using different generations of β-Ga 2 O 3 as an ultra-wide-bandgap power semiconductor device for high power converter applications is explored. The competitiveness of β-Ga 2 O 3 for power converters in still not well quantified, for which the major determining factors are the on-state resistance, R ON , reverse blocking voltage, V BR , and the thermal resistance, R th . We have used the best reported device specifications from literature, both in terms of reports of experimental measurements and potential demonstrated by computer-aided designs, to study power converter performance for different device generations. Modular multilevel converter-based voltage source converters are identified as a topology with significant potential to exploit these device characteristics. The performance of MVDC & HVDC converters based on this topology have been analysed, focusing on system level power losses and case temperature rise at the device level. Comparisons of these β-Ga 2 O 3 devices are made against contemporary SiC-FET and Si-IGBTs. The results have indicated that although the early β-Ga 2 O 3 devices are not competitive to incumbent Si-IGBT and SiC-FET modules, the latest experimental measurements on NiO X /β-Ga 2 O 3 and β-Ga 2 O 3 /diamond significantly surpass the performance of incumbent modules. Furthermore, parameters derived from semiconductor-level simulations indicate that the β-Ga 2 O 3 /diamond in superjunction structures delivers even superior performance in these power converters.

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Section: State-of-the-art Ultra-wide-bandgap Devicesmentioning

confidence: 99%

$\beta$-Ga₂O₃ in Power Electronics Converters: Opportunities & Challenges

Jahdi,

Kumar,

Deakin

et al. 2024

IEEE Open J. Power Electron.

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“…Today, β-Ga 2 O 3 , due to its ultrawide bandgap of ∼4.9 eV, high electric field strength of ∼8 MV cm −1 , and extremely high Baliga and Johnson figures of merit compared to other wide bandgap semiconductor materials, such as SiC and GaN, with high thermal and chemical stability, is emerging as a promising candidate for power device applications [1][2][3][4][5][6][7][8][9][10]. To date, several authors have extensively studied Schottky barrier diodes (SBDs), field effect transistors (FETs), and solar blind photodetectors based on β-Ga 2 O 3 due to the availability and ease of growth of high-quality single crystal substrates, homoepitaxy, and heteroepitaxy thin films via various meltgrowth and thin-film growth techniques [3,[11][12][13][14][15][16][17][18][19][20]. SBDs and FETs based on β-Ga 2 O 3 with breakdown voltages greater than 1 kV have been demonstrated [21].…”

Section: Introductionmentioning

confidence: 99%

Investigation of high-performance Schottky diodes on a Ga₂O₃ epilayer using Cu with high barrier height, high temperature stability and repeatability

Sheoran

Singh

2023

J. Phys. D: Appl. Phys.

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This work reports about high-performance Schottky barrier diodes (SBD) fabricated on Ga2O3 epilayers using Cu as Schottky contacts. The fabricating SBDs exhibited high Schottky barrier Heights (SBH) with values greater than 1.0 eV, near unity ideality factor, and high rectification ratio (RR) of 1012 at 300 K. Temperature-dependent current-voltage (I-V-T) and capacitance-voltage (C-V-T) measurements were performed up to 500 K. The SBHs \left(\phi_B\right)_{IV} calculated from the IVT characteristics initially increased with temperature and then decreased with near unity ideality factors. The increase of \left(\phi_B\right)_{IV} with temperatures up to 410 K, indicating the spatial inhomogeneity at the metal-semiconductor interface. The decrease of \left(\phi_B\right)_{IV} above 410 K observed indicates the enhancement of barrier homogeneity at higher temperatures (≥410 K). The decrease of \left(\phi_B\right)_{IV} above 410 K and decrease of \left(\phi_B\right)_{CV} calculated from the CVT characteristics with increased temperature assigned to the bandgap-narrowing of Ga2O3. IVT measurements were repeated many times, SBDs exhibited excellent thermal stability and showed high SBHs >1.0 eV, high RR, and near unity ideality factor. All these findings attributed to the formation of high work function copper oxide thin film at the interface between Cu and Ga2O3. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) revealed the formation of a thin layer of high work function copper oxide. The finding provides the possibilities to fabricate a Schottky contact with high and homogeneous barrier and thermal stability using cheap, abundant copper material, enabling low-cost mass production of future power semiconductor devices based on oxide semiconductors.

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