Bound-to-bound transitions at neutral zinc in silicon: Effective-mass-like states and hole-hole interaction

Abstract

We present infrared absorption measurements on the neutral charge state of the doubleacceptor zinc in silicon. An effective-mass-like Py2 spectrum for the excitation of the secondarily bound hole is found. The ground state is calculated to be 319.1+ 0.3 meV above the valence band. The observed splitting of the ground state into three sublevels is assigned to the hole-hole interaction and crystal-field splitting. The results are compared with recent findings on double acceptors in germanium.

Optical Absorption Study of the Interaction between Group II Acceptors and Hydrogen in Si

“…1 shows the absorption spectra before (spectrum a) and after (spectrum b) hydrogen doping. Many peaks agree well with those identified as being due to the transition of holes associated with Zn; the peaks at 2451.8, 2482.8, and 2524.3 cm À1 correspond to I 1 , I 2 , and I 4 , respectively, of the effective-mass like lines found by Doernen et al [7]. (Their peak I 3 at 2513.9 cm À1 was very weak in our case.)…”

Extreme Reduction of the Spin-Orbit Splitting of the Deep Acceptor Ground State ofZnS−in Si

“…In low-resistivity p-and n-type samples with the Fermi level near the valence and conduction bands, respectively, the samples had to be illuminated with white light to obtain the spectra. By taking into account the two acceptor levels of substitutional Zn at 319 meV [12] and at about 660 meV [1], the spectra can be attributed to Zn S 2 . We analyze the spectra using the general form of the Zeeman matrix of two coupled G 8 and G 7 states as tabulated in [13], which is not restricted to a specific model but only reflects the transformation properties of the states involved.…”