1995
DOI: 10.1002/pssb.2221880218
|View full text |Cite
|
Sign up to set email alerts
|

Bound hole states in direct‐gap semiconductors with screw dislocations

Abstract: The dispersion law of holes bound at a screw dislocation in cubic semiconductors is calculated on the basis of deformation potential theory taking into account the threefold degeneracy of the valence band maximum in a perfect crystal. The lowest dislocation band (the corresponding azimuthal quantum number is rn = 0) is slightly affected by the anisotropy of the effective mass. Only the change of the effective mass is observed. The states with azimuthal number rn + 0 are considerably more affected by the anisot… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
12
0

Year Published

1998
1998
2023
2023

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 6 publications
(12 citation statements)
references
References 7 publications
0
12
0
Order By: Relevance
“…The polarization of the interband DA is most strongly pronounced for transitions of minimum energy and becomes weaker as the transition energy approaches the unpolarized fundamental absorption edge [5]. This work aims of investigating essential peculiarities of the dislocation related optical spectra within the framework of the deformation potential theory.In a cubic crystal the calculated spectra of electron and hole states bound to a single straight dislocation for the cases of an edge and a screw dislocations due to its longrange deformation potential were reported by the authors in [6,7]. In one-band approximation the spectrum of bound electron dislocation states close to the conduction band (Dc states) and the spectrum of bound hole dislocation states close to the valence band (Dv states) were treated separately.…”
mentioning
confidence: 98%
See 4 more Smart Citations
“…The polarization of the interband DA is most strongly pronounced for transitions of minimum energy and becomes weaker as the transition energy approaches the unpolarized fundamental absorption edge [5]. This work aims of investigating essential peculiarities of the dislocation related optical spectra within the framework of the deformation potential theory.In a cubic crystal the calculated spectra of electron and hole states bound to a single straight dislocation for the cases of an edge and a screw dislocations due to its longrange deformation potential were reported by the authors in [6,7]. In one-band approximation the spectrum of bound electron dislocation states close to the conduction band (Dc states) and the spectrum of bound hole dislocation states close to the valence band (Dv states) were treated separately.…”
mentioning
confidence: 98%
“…For an edge dislocation the calculation [6] under real values of parameters shows that the dipole momentum of this transition is perpendicular to the dislocation line and parallel to the Burgers vector. For a screw dislocation the dipole momentum of the lowest energy transition is parallel to the dislocation line and to the Burgers vector [7]. Further analysis of the DA spectra is presented below.…”
mentioning
confidence: 98%
See 3 more Smart Citations