Polarized Light Absorption in Direct-Gap Semiconductors Related to Bound States in a Long-Range Deformation Potential of Dislocations

Razumova, M. A.; Khotyaintsev, V.M.

doi:10.1002/(sici)1521-3951(199812)210:2<791::aid-pssb791>3.0.co;2-9

Cited by 4 publications

(3 citation statements)

References 2 publications

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“…These states are described by the products of a dislocation-modified envelope wave function, ψ( r ), and a Bloch amplitude, u ( r ). The modification of envelopes gives rise to the optical activity upon both interband , and intraband transitions whereas the modification of amplitudes is usually neglected. To address the effect of screw dislocation on the nanocrystal chirality, we focus on the intraband transitions of electrons in semiconductor nanocrystals with a simple-cubic lattice.…”

Section: Screw Dislocations In Semiconductor Nanocrystalsmentioning

confidence: 99%

Dislocation-Induced Chirality of Semiconductor Nanocrystals

et al. 2015

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Optical activity is a common natural phenomenon, which occurs in individual molecules, biomolecules, biological species, crystalline solids, liquid crystals, and various nanosized objects, leading to numerous important applications in almost every field of modern science and technology. Because this activity can hardly be altered, creation of artificial active media with controllable optical properties is of paramount importance. Here, for the first time to the best of our knowledge, we theoretically demonstrate that optical activity can be inherent to many semiconductor nanowires, as it is induced by chiral dislocations naturally developing during their growth. By assembling such nanowires in two- or three-dimensional periodic lattices, one can create optically active quantum supercrystals whose activity can be varied in many ways owing to the size quantization of the nanowires' energy spectra. We believe that this research is of particular importance for the future development of semiconducting nanomaterials and their applications in nanotechnology, chemistry, biology, and medicine.

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Section: Screw Dislocations In Semiconductor Nanocrystalsmentioning

confidence: 99%

Dislocation-Induced Chirality of Semiconductor Nanocrystals

et al. 2015

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“…The aim of this work is to show that the residual internal strain and torsion of semiconducting nanocrystals with screw dislocations are among the major sources of their optical activity. The long-wavelength quantum states of electrons and holes confined by such nanocrystals are often described by assuming that the lattice distortion affects only the envelope wave functions whereas the Bloch amplitudes are the same as in the ideal lattice 52 53 . To enable the approximate analytical treatment of the nanocrystal’s electronic subsystem, we neglect the Eshelby twist and represent the semiconductor band structure by a pair of simple valence and conduction bands.…”

Section: Quantum States Of Dislocation-distorted Nanocrystalsmentioning

confidence: 99%

Giant Optical Activity of Quantum Dots, Rods and Disks with Screw Dislocations

Baimuratov

Rukhlenko

Noskov

et al. 2015

Sci Rep

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For centuries mankind has been modifying the optical properties of materials: first, by elaborating the geometry and composition of structures made of materials found in nature, later by structuring the existing materials at a scale smaller than the operating wavelength. Here we suggest an original approach to introduce optical activity in nanostructured materials, by theoretically demonstrating that conventional achiral semiconducting nanocrystals become optically active in the presence of screw dislocations, which can naturally develop during the nanocrystal growth. We show the new properties to emerge due to the dislocation-induced distortion of the crystal lattice and the associated alteration of the nanocrystal’s electronic subsystem, which essentially modifies its interaction with external optical fields. The g-factors of intraband transitions in our nanocrystals are found comparable with dissymmetry factors of chiral plasmonic complexes, and exceeding the typical g-factors of chiral molecules by a factor of 1000. Optically active semiconducting nanocrystals—with chiral properties controllable by the nanocrystal dimensions, morphology, composition and blending ratio—will greatly benefit chemistry, biology and medicine by advancing enantiomeric recognition, sensing and resolution of chiral molecules.

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“…The dislocations absorb the light with photon energy of 2.67 eV via their dislocation band 15, and this energy is somewhat larger than the estimated energy. Moreover, the velocity for the dislocation glide is independent of the polarization of illuminating light 16, even though the photo‐absorption due to the dislocation band is expected to be polarized along the Burgers vector 17. These results suggest that point defect complexes involving dislocations such as soliton defects 18 and kinks, rather than dislocation cores, are the candidates for the origin of the defect level.…”

Section: Introductionmentioning

confidence: 97%

In situ analysis of optoelectronic properties of dislocations in ZnO in TEM observations

Ohno

Taishi

Yonenaga

2009

Physica Status Solidi (a)

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Extended defects acting as non‐radiative recombination center or those acting as radiative one were, respectively, studied by transmission electron microscopy under the illumination of a monochromatic light or cathodoluminescence spectroscopy combined with light illumination. By means of this method, defect levels associated with dislocations in ZnO, which were introduced at elevated temperatures above 923 K, were determined. It was proposed that (i) a screw dislocation, presumably acting as non‐radiative recombination center, glides under the illumination of a light with photon energy above 2.48–2.61 eV, due to an electron–hole recombination at a defect level of 2.48–2.61 eV depth, and (ii) a mixed dislocation acts as radiative recombination center with a defect level of 3.1 eV depth.

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Polarized Light Absorption in Direct-Gap Semiconductors Related to Bound States in a Long-Range Deformation Potential of Dislocations

Cited by 4 publications

References 2 publications

Dislocation-Induced Chirality of Semiconductor Nanocrystals

Dislocation-Induced Chirality of Semiconductor Nanocrystals

Giant Optical Activity of Quantum Dots, Rods and Disks with Screw Dislocations

In situ analysis of optoelectronic properties of dislocations in ZnO in TEM observations

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