Boron uphill diffusion during ultrashallow junction formation

Duffy, Ray; Venezia, V. C.; Heringa, A.; Hüsken, T. W. T.; Hopstaken, M.; Cowern, N.E.B.; Griffin, P.B.; Wang, C. C.

doi:10.1063/1.1578512

Cited by 74 publications

(46 citation statements)

References 22 publications

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“…In fact, in SOI samples the buried oxide acts as a sink for interstitials, increasing the EOR dissolution rate and reducing the enhancement of B diffusion. 8 The effect is more evident for the samples preamorphized at 20 keV due to the proximity of the EOR defects to the buried oxide layer. Also, for this dose the surface trapping in the samples preamorphized at 8 keV is higher with respect to the surface trapping exhibited by the samples more deeply preamorphized at 20 keV.…”

Section: B Comparison With the Experimental Profilesmentioning

confidence: 93%

“…In particular, the surface ͑and the interfaces͒ affect the impurity profile through both the segregation and trapping of dopant atoms in energetically favorable places and acting on point defects distribution, and consequently, on the TED phenomena. These effects are particularly evident for boron [6][7][8][9] and phosphorous, 10,11 but have been also evidenced in ultrashallow junctions obtained by low-energy arsenic implantation. 12,13 A preferential diffusion of boron at high concentrations toward the surface against the concentration gradient has been recently observed by Wang et al 6 after ultralow-energy implants and low-temperature thermal cycles.…”

Section: 2mentioning

confidence: 99%

“…Shima et al 7 quantitatively investigated how boron segregates to regions close to the surface and concluded that the pileup is mainly confined within 0.6 nm of the Si side of the SiO 2 / Si interface. Duffy et al 8 reported that the effect is enhanced by the preamorphization of the substrate and it increases with decreasing depth of the amorphous layer.…”

Section: 2mentioning

confidence: 99%

“…Some authors ascribe the preferential migration toward the surface during the postimplantation annealing to the locally steep concentration gradient of interstitials. 8,10,14 Alternative explanations are based on interface trapping, 13,15 band bending, 16 elastic stress, [17][18][19] and segregation in front of the amorphous/crystalline interface during the solid phase epitaxial regrowth. 20,21 However, besides understanding the mechanisms responsible for this anomalous behavior, knowledge of the dopant distribution in proximity of the surface and the availability of simulation codes able to predict dopant evolution during postimplantation annealing are important tools for the design and performance of modern electronic devices.…”

Section: 2mentioning

confidence: 99%

“…Under these experimental conditions, several mechanisms such as diffusion in amorphous Si ͑Ref. 5͒ and uphill diffusion [6][7][8][9][10][11][12][13] influence the dopant redistribution and activation. In particular, the surface ͑and the interfaces͒ affect the impurity profile through both the segregation and trapping of dopant atoms in energetically favorable places and acting on point defects distribution, and consequently, on the TED phenomena.…”

Section: 2mentioning

confidence: 99%

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Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Ferri

Solmi

Giubertoni

et al. 2007

Journal of Applied Physics

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Redistribution during annealing of low-energy boron ͑B͒ implants in silicon on insulator ͑SOI͒ structures and in bulk Si has been investigated by comparing secondary ion mass spectrometry ͑SIMS͒ and simulated profiles. All the samples have been preamorphized with Ge at different implantation energies in order to investigate the effects of the position of the damage on B diffusion. Different B doses in the range between 2 ϫ 10 13 and 2 ϫ 10 15 cm −2 and annealing temperatures between 700 and 1100°C have been investigated. All SIMS profiles show a B pileup in the first few nanometers of the Si matrix in proximity of the Si surface. The results of our simulations, performed on samples implanted at different doses ͑below and above the solid solubility͒, indicate that the B redistribution upon annealing can be explained with a simple model which considers the presence of traps in the surface region, without considering any asymmetric behavior of the dopant diffusion. The sink region is a few monolayers ͑1-2 nm͒ for doses of 2 ϫ 10 13 and 2 ϫ 10 14 cm −2 , and it extends to about 7 nm for the highest dose of 2 ϫ 10 15 cm −3 , in the region of very high B concentration where precipitates and clusters shrink the incoming B atoms. For the two lowest B doses, the amount of B trapped at the surface is maximum at temperatures around 800°C, when more than 80% of the implanted dopant is made immobile and electrically inactive. In our experimental conditions, i.e., preamorphization performed with constant dose and different implantation energies, the amount of trapped B increases with reducing the depth of the amorphous layer and it is higher in the bulk Si than in SOI.

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Section: B Comparison With the Experimental Profilesmentioning

confidence: 93%

Section: 2mentioning

confidence: 99%

Section: 2mentioning

confidence: 99%

Section: 2mentioning

confidence: 99%

Section: 2mentioning

confidence: 99%

See 3 more Smart Citations

Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Ferri

Solmi

Giubertoni

et al. 2007

Journal of Applied Physics

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An improved model for boron diffusion and activation in silicon

et al. 2009

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Technologies such as solid-phase epitaxial regrowth and millisecond annealing techniques have led to a wide range of maximum temperatures and heating rates for activating dopants and eliminating ion implantation damage for transistor junction formation. Developing suitable annealing strategies depends on mathematical models that incorporate accurate defect physics. The present work describes a model that includes a newly discovered representation of defect annihilation at surfaces and of near-surface band bending, together with an improved representation of interstitial clustering. Key parameters are determined by maximum likelihood (ML) estimation and maximum a posteriori (MAP) estimation. The model yields a substantially improved ability to model the behavior of implanted boron over a wide range of annealing conditions.

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Advection and dispersion induced by an interface between two immiscible fluids in a laminar flow

Dejam

2022

AIChE Journal

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We report novel transport phenomena arising from an interface between two immiscible liquids in a laminar flow. In the context of the Taylor–Aris dispersion theory, we provide a quantitative description and demonstrate that the planar interface between two liquids in a laminar flow can lead to uphill advection and dispersion, dispersion barrier, as well as osmotic dispersion. The developed understanding of the newly identified transport phenomena paves the way for further research in this area and enables the insightful elucidation of mixing and separation processes in multiphase systems.

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Boron uphill diffusion during ultrashallow junction formation

Cited by 74 publications

References 22 publications

Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

An improved model for boron diffusion and activation in silicon

Advection and dispersion induced by an interface between two immiscible fluids in a laminar flow

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