2018
DOI: 10.3390/nano8100849
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Boron Nitride as a Novel Support for Highly Stable Palladium Nanocatalysts by Atomic Layer Deposition

Abstract: The ability to prepare controllable nanocatalysts is of great interest for many chemical industries. Atomic layer deposition (ALD) is a vapor phase technique enabling the synthesis of conformal thin films and nanoparticles (NPs) on high surface area supports and has become an attractive new route to tailor supported metallic NPs. Virtually all the studies reported, focused on Pd NPs deposited on carbon and oxide surfaces. It is, however, important to focus on emerging catalyst supports such as boron nitride ma… Show more

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Cited by 23 publications
(24 citation statements)
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References 84 publications
(120 reference statements)
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“…In the first study, the ALD BN was deposited nearly stoichiometrically at both 400 C and 750 C. 50 X-ray diffraction (XRD) analyses revealed that the BN films were less ordered at 400 C but had improved crystallinity at 750 C, showing a turbostratic BN structure (t-BN). This BBr 3 /NH 3 process of ALD BN has been practiced on various substrates at 750 C. [52][53][54][55][56][57] Aimed at improving this ALD process at a lower temperature and with a higher growth rate, a subsequent study used a laser to assist the ALD in a wider range of 250 C-750 C. 51 The laser helped create more reactive fragments, and this laser-assisted ALD (LALD) process resulted in higher growth per cycle (GPC), two times higher than that in thermal ALD. At a temperature higher than 750 C, however, the GPC for both the LALD and conventional ALD processes decreased, probably due to thermal desorption of precursors.…”
Section: H-bnmentioning
confidence: 99%
“…In the first study, the ALD BN was deposited nearly stoichiometrically at both 400 C and 750 C. 50 X-ray diffraction (XRD) analyses revealed that the BN films were less ordered at 400 C but had improved crystallinity at 750 C, showing a turbostratic BN structure (t-BN). This BBr 3 /NH 3 process of ALD BN has been practiced on various substrates at 750 C. [52][53][54][55][56][57] Aimed at improving this ALD process at a lower temperature and with a higher growth rate, a subsequent study used a laser to assist the ALD in a wider range of 250 C-750 C. 51 The laser helped create more reactive fragments, and this laser-assisted ALD (LALD) process resulted in higher growth per cycle (GPC), two times higher than that in thermal ALD. At a temperature higher than 750 C, however, the GPC for both the LALD and conventional ALD processes decreased, probably due to thermal desorption of precursors.…”
Section: H-bnmentioning
confidence: 99%
“…[2][3][4][5][6] Recently, boron nitride nanomaterials have drawn extensive attention from the academic community. 7,8 As a promising novel inorganic nanomaterial, boron nitride has been applied in many biomedical fields. 9,10 Boron nitride has a hexagonal structure similar to that of graphene, and possesses remarkable properties of biocompatibility, corrosion resistance, and large thermal neutroncapture cross-sections.…”
Section: Introductionmentioning
confidence: 99%
“…Depositions of Pd thin lm coordinated with H 2 (ref. 31 and 32 ) and formalin 33,34 on Al 2 O 3 have been proven feasible. However, in those studies, the growth of Pd thin lm was hampered by Al(hfac) surface species, leading to a longer nucleation period and growth delay at the beginning of the ALD process.…”
Section: Introductionmentioning
confidence: 99%