Boron‐Modified Electron Transfer in Metallic 1T MoSe₂ for Enhanced Inherent Activity on Per‐Catalytic Site toward Hydrogen Evolution

Abstract

Phase‐transition‐induced electronic structure and geometry‐modulation‐increased edge sites are of great importance for boosting the electrocatalytic activity of MoSe2 toward hydrogen evolution reaction (HER). However, little efforts have been made to improve the intrinsic activity on per‐catalytic site of MoSe2 for HER. In this work, the electrocatalytic HER activities of MoSe2 are extremely enhanced by simple incorporation of boron which can reasonably engineer the electron transfer from Mo atoms to the active sites including B and Se atoms. Compared with the pristine 1T MoSe2, the as‐opimized B‐1T MoSe2 nanosheets show a reduced overpotential of 180 mV at current density of 10 mA cm−2, a lowered Tafel slope of 50.6 mV dec−1, and increased turnover frequency under a constant overpotential. While the electrochemical surface area of the catalyst after B‐incorporation is decreased, the improved inherent activity on per‐catalytic site and facilitated HER kinetics are demonstrated. The results pave the way to reasonably engineer the electron transfer to the active sites in the catalysts by B‐doping to boost the intrinsic activity on per‐catalytic site for electrocatalytic HER.

Crystal facet and phase engineering for advanced water splitting

“…255 In addition, Mao et al directly obtained 1T-MoSe 2 via a facile hydrothermal method. 256 As shown in Fig. 12d, 1T-MoSe 2 showed a remarkable HER performance over 2H-MoSe 2 , attributed to the favorable ΔG H* and high conductivity of the 1T electronic structure.…”

Harnessing Plasma‐Assisted Doping Engineering to Stabilize Metallic Phase MoSe2for Fast and Durable Sodium‐Ion Storage

“…[21,22] In addition, a gentle approach of heteroatoms doping, such as Re, Mn, B, or N doping, can successfully trigger the phase transition, and the dopants would also act as an electron donor to stabilize the 1T phase. [23][24][25][26] Nevertheless, low doping concentrations aroused from high doping energy barriers have resulted in low phase-transition efficiency. Therefore, developing a facile and scalable phase-transition engineering with high efficiency to achieve stabilized 1T-MoSe 2 under a mild operation condition is still desperately needed but remains an unprecedented challenge.…”

Vanadium‐Doped Molybdenum Diselenide Atomic Layers with Room‐Temperature Ferromagnetism

“…[6] MoSe 2 is a member of the TMDCs family, and a few examples of doped MoSe 2 have been reported in recent years. [7][8][9] Diluted magnetic semiconductors (DMS), which are formed by replacement of the atoms in non-magnetic semiconductors with magnetic transition metal dopants, [10,11] are attractive materials because the combination of semiconducting and magnetic properties. Previous research on DMS mainly focused on the bulk III-V compounds such as GaAs with Mn doping.…”

“…Doping of TMDCs is an important strategy to modulate the properties of these materials, which largely preserves and enhances inherent properties and also leads to additional new characteristics [6] . MoSe 2 is a member of the TMDCs family, and a few examples of doped MoSe 2 have been reported in recent years [7–9] …”