Boron Diffusion with Boric Acid for High Efficiency Silicon Solar Cells

Das, Arnab; Kim, D. S.; Nakayashiki, Kenta; Rounsaville, Brian; Meemongkolkiat, Vichai; Rohatgi, A.

doi:10.1149/1.3392364

Cited by 31 publications

(16 citation statements)

References 11 publications

(20 reference statements)

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“…where the electronic charge q = 1.6 × 10 −19 , the hole diffusion coefficient D P = 11.78 cm 2 /s, the wafer thickness W = 190 μm, the background doping concentration N D = 9.2 × 10 14 cm −3 , and the intrinsic carrier concentration n i = 8.6 × 10 9 cm −3 [16]. The front surface recombination velocity of 11 000 cm/s and the back surface recombination velocity (BSRV) of 30 cm/s were extracted by numerical modeling in PC1D which involves matching the measured short-and longwavelength internal quantum efficiencies (IQEs).…”

Section: Resultsmentioning

confidence: 99%

High-Efficiency n-Type Si Solar Cells With Novel Inkjet-Printed Boron Emitters

Ryu

Upadhyaya

et al. 2012

IEEE Electron Device Lett.

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Formation of a well-passivated boron emitter for mass production of low-cost and high-efficiency n-type silicon solar cells is a major challenge in the photovoltaic industry. In this letter, we report on a novel and commercially viable method, inkjet printing, to create boron emitters. Phosphorus diffusion was used on the rear to form a back-surface field in conjunction with chemically grown oxide/silicon nitride (SiN x ) stack on the front and back for surface passivation. Finally, front and back screen-printed contacts were formed through the dielectric stacks to fabricate large-area (239 cm 2 ) n-type cells. This technology resulted in 19.0%-efficient p + -n-n + cells with a V oc of 644 mV, a J sc of 38.6 mA/cm 2 , and a fill factor of 76.3%. This demonstrates for the first time the promise of boron-inkjet-printing technology for low-cost and high-performance n-type Si cells.

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Section: Resultsmentioning

confidence: 99%

High-Efficiency n-Type Si Solar Cells With Novel Inkjet-Printed Boron Emitters

Ryu

Upadhyaya

et al. 2012

IEEE Electron Device Lett.

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“…Boron BSF has some advantages over Al-BSF [3,11]. In general, BSF introduces p þ -p (high-low) junction and acts as a potential barrier to minority carriers.…”

Section: Introductionmentioning

confidence: 99%

c-Si solar cells formed from spin-on phosphoric acid and boric acid

et al. 2015

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a b s t r a c tThis paper reports the fabrication of c-Si based solar cells using spin-on dopants. Solar cells were developed by texturing both surfaces of the c-Si, and forming the pen junction by spin-coating the ntype dopant followed by rapid thermal processing (RTP). For back surface field formation on the rear side, a similar spin-coating step was undertaken for one cell and e-beam Al deposition for the other. In the case of double-sided spin-coated cell, simultaneous pen junction and back surface field were formed in one RTP cycle. Without using high performance features in the device, double-sided spin-on doped cell showed V oc of 600 ± 0.01 mV, J sc of 33.1 ± 0.03 mA/cm 2 , FF of 74.26 ± 0.06% and efficiency of 14.74%. As compared to single-sided spin-on doped cell, an improvement in efficiency of about 1.3% has been obtained which can be attributed to boron back surface field. Double-sided spin-on process significantly reduces thermal budget and improves throughput. Besides texturization, high efficiency features have not been used in the device. The results clearly demonstrate that c-Si based solar cells are potentially cost effective to manufacture.

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“…it is clear that by improving screen printed contacts to boron emitter, with FF of 78 %, an n-base cell efficiency of 20% can be achieved by inkjet boron emitter technology. These results are quite competitive or better than existing technologies such as boron tribromide (BBr 3 ) diffusion, boric acid spin-on, and screen printing [6,7,8].…”

Section: Introductionmentioning

confidence: 94%

High efficiency n-type silicon solar cell with a novel inkjet-printed boron emitter

Ryu

Upadhyaya

Das

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

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Formation of boron emitters for mass production of lowcost and high efficiency n-type silicon solar cells is a major challenge in the PV industry. In this paper, we report on the successful fabrication of high efficiency screen-printed 19.3% n-type silicon cell with V oc of 646 mV, J sc of 39.4 mA/cm 2 , and FF of 75.6 %, using boron dopant ink applied by inkjet printing to create boron-doped emitter. The detailed internal quantum efficiency (IQE) analysis showed excellent front surface recombination velocity (FSRV) of 15,000 cm/s and back surface recombination velocity (BSRV) of 66 cm/s. This demonstrates for the first time the promise of boron dopant ink for high performance n-type silicon solar cells.

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Boron Diffusion with Boric Acid for High Efficiency Silicon Solar Cells

Cited by 31 publications

References 11 publications

High-Efficiency n-Type Si Solar Cells With Novel Inkjet-Printed Boron Emitters

High-Efficiency n-Type Si Solar Cells With Novel Inkjet-Printed Boron Emitters

c-Si solar cells formed from spin-on phosphoric acid and boric acid

High efficiency n-type silicon solar cell with a novel inkjet-printed boron emitter

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