Boron diffusion in silicon: the anomalies and control by point defect engineering

High-resolution X-ray diffraction by end of range defects in self-amorphized Ge

“…They are Si self-interstitials (Is) aggregates which, during thermal annealings, can release an Is flux towards the surface, leading to dopants anomalous diffusion and clustering [5]. For these reasons, in the two last decades, EOR defects have been intensively studied and several point defects engineering strategies [6][7][8][9] have been exploited to stop their detrimental actions on dopants.…”

Boron diffusion in presence of defects induced by helium implantation

“…It consists in adequate implantations that modify the local point defect concentration involved in diffusion mechanism and responsible of the thermal diffusion increase. As an example, high energy (MeV) ion implantation is often employed to separate the spatial distribution of vacancies and interstitials [18]. In this study, low energy helium implantation has been used to modify this point defect population.…”

Defect characterization in boron implanted silicon after flash annealing

“…The first issue comes from the well known space charge effect in which a significant current loss occurs during beam extraction and transport. The second issue is due to the transient enhanced diffusion of dopant in silicon [1,2]. For p-type doping, implanted boron (B) atoms interact with Si interstitials to create a diffusion path with almost zero diffusion barrier [1][2][3].…”

“…The second issue is due to the transient enhanced diffusion of dopant in silicon [1,2]. For p-type doping, implanted boron (B) atoms interact with Si interstitials to create a diffusion path with almost zero diffusion barrier [1][2][3]. The penetration of B tail is determined by annealing temperature and time, as well as the population of free interstitials, which is further determined by the Ostwald ripening process of defect annealing [1][2][3].…”