Boron diffusion behavior in silicon during shallow p+/n junction formation by non‐melt excimer laser annealing

Aid, Siti Rahmah; Matsumoto, Satoru; Fuse, G.

doi:10.1002/pssa.201026531

Cited by 16 publications

(14 citation statements)

References 13 publications

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“…1). The a-Si layer thickness calculated under these conditions is ~ 5 nm; which agrees well with the cross-sectional high-resolution transmission electron microscopy (X-TEM) analysis [7,8]. Subsequently, low-energy boron-ion implantation was performed with energy of 0.3 keV, dose of 1.2 × 10 15 cm -2 and tilt angle of 0°.…”

Section: Methodssupporting

confidence: 80%

“…This is due to the NLA alone is insufficient to regrow of a-Si layer and dopant activation, as reported previously [7]. Figure 5 shows the sheet resistance of the samples subjected to preannealing RTA followed by NLA with number of laser pulse shot varied between 10 -100 shots.…”

Section: -P2supporting

confidence: 59%

“…aSi layer on c-Si substrate).The detail of this calculation is described by Siti et.al. [7] (1) where ρ is mass density, c is specific heat capacity, λ is thermal conductivity, α is absorption coefficient and R is reflection coefficient.…”

Section: Methodsmentioning

confidence: 99%

“…Dopant activation was evaluated from the sheet resistances (R s ) that were obtained by Hall measurements. Table 1 shows the sample surface temperatures calculated using the numerical calculation of heat flow equation for the selected laser energy densities after single shot laser irradiation [7]. The energy density range for NLA is 300-400 mJ/cm 2 with the temperature range of 1078-1323 K. The temperature exceeds the aSi melting temperature of 1420 K when the energy densities reach over 450 mJ/cm 2 .…”

Section: Methodsmentioning

confidence: 99%

“…Low-energy boron-ion implantation can then be performed with high dose concentration to obtain highly doped of boron near surface [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Pulse Number on Dopant Activation in Silicon during Shallow p+/n Junction Formation by Non-Melt Excimer Laser Annealing

Aid

Hamzah

Ambran

et al. 2015

MATEC Web of Conferences

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Abstract. Shallow p+/njunctions were formed using Ge-PAI and low-energy/high-dose boron-ion implantation, followed by thermal annealing involving nanosecondnon-melt excimer laser annealingandrapidthermal annealing. The effect of laser pulse number on dopant activation and regrowth of a-Si layer are discussed.We found that laser annealing aloneis insufficient to regrow a-Si layer and activate dopant. In contrast, activationwas observed in the samples that were subjected to preannealingrapid thermal annealing followed by non-melt laser annealing; with slight increase of sheet resistance valuewhen the number of laser pulse shot was increased. This is considered due to the interaction of dopant and supersaturated defect in the remaining a-Si layer.The percentage of defect-dopant interaction increased with the pulse shot numbers which contributed to the decrease in activation level.

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Section: Methodssupporting

confidence: 80%

Section: -P2supporting

confidence: 59%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

“…Low-energy boron-ion implantation can then be performed with high dose concentration to obtain highly doped of boron near surface [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Pulse Number on Dopant Activation in Silicon during Shallow p+/n Junction Formation by Non-Melt Excimer Laser Annealing

Aid

Hamzah

Ambran

et al. 2015

MATEC Web of Conferences

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Comparison of boron diffusion in silicon during shallow p⁺/n junction formation by non‐melt excimer and green laser annealing

Aid¹,

Matsumoto²,

Fuse³

et al. 2011

Physica Status Solidi (a)

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The combination of Ge pre‐amorphization implantation, low‐energy boron implantation, and non‐melt laser annealing is a promising method for forming ultrashallow p+/n junctions in silicon. In this study, shallow p+/n junctions were formed by non‐melt annealing implanted samples using a green laser (visible laser). The dopant diffusion, activation, and recrystallization of an amorphous silicon layer were compared with those obtained in our previous study in which non‐melt annealing was performed using a KrF excimer laser (UV laser). The experimental results reveal that only slight diffusion of boron in the tail region occurred in green‐laser‐annealed samples. In contrast, remarkable boron diffusion occurred in KrF‐laser‐annealed samples for very short annealing times. Recrystallization of the amorphous silicon layer was slower in green‐laser‐annealed samples than in KrF‐laser‐annealed samples. We consider the penetration depth and the pulse duration are important factors that may affect boron diffusion.

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Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing

Aid

Uneme

Wakabayashi

et al. 2017

Physica Status Solidi (a)

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Activation of Mg‐implanted GaN has been investigated by the combination of thermal and laser annealing. The laser annealing was carried out using third harmonic generation (λ = 355 nm) of a Nd:YAG laser. Mg ion activation and reduction of implanted‐defects after various annealing processes have been analyzed with Raman spectroscopy. The sample that was thermally annealed at 700 °C for 20 min; followed by laser annealing, with energy density of 0.35 mJ cm−2, is found to be effective for p‐type conversion in electrical characteristics. The value for sheet resistance and hole mobility is 1.7 × 103 Ω/□ and 40 cm2 Vs−1; respectively. Positron annihilation revealed that the vacancy clusters created in the sub‐surface region, by thermal annealing dissolved following laser annealing, leading to the p‐type conversion of GaN.

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Boron diffusion behavior in silicon during shallow p⁺/n junction formation by non‐melt excimer laser annealing

Cited by 16 publications

References 13 publications

Effect of Pulse Number on Dopant Activation in Silicon during Shallow p+/n Junction Formation by Non-Melt Excimer Laser Annealing

Effect of Pulse Number on Dopant Activation in Silicon during Shallow p+/n Junction Formation by Non-Melt Excimer Laser Annealing

Comparison of boron diffusion in silicon during shallow p⁺/n junction formation by non‐melt excimer and green laser annealing

Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing

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Boron diffusion behavior in silicon during shallow p+/n junction formation by non‐melt excimer laser annealing

Cited by 16 publications

References 13 publications

Effect of Pulse Number on Dopant Activation in Silicon during Shallow p+/n Junction Formation by Non-Melt Excimer Laser Annealing

Effect of Pulse Number on Dopant Activation in Silicon during Shallow p+/n Junction Formation by Non-Melt Excimer Laser Annealing

Comparison of boron diffusion in silicon during shallow p+/n junction formation by non‐melt excimer and green laser annealing

Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing

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Boron diffusion behavior in silicon during shallow p⁺/n junction formation by non‐melt excimer laser annealing

Comparison of boron diffusion in silicon during shallow p⁺/n junction formation by non‐melt excimer and green laser annealing