Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing

Aid, Siti Rahmah; Uneme, Takahiro; Wakabayashi, Naoki; Yamazaki, Kazunori; Uedono, Akira; Matsumoto, Satoru

doi:10.1002/pssa.201700225

Cited by 21 publications

(11 citation statements)

References 20 publications

(30 reference statements)

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“…Other methods have also been reported for improving p-doping efficiency. Kang et al 137 proposed a new multidimensional Mg SL doping method to improve the vertical conductivity of AlGaN materials. They calculated the density of states along the [0001] direction of the non-doped and Mg-doped structures via first-principles analysis and found that three-dimensional SL Mg doping reduced the hole barrier and increased the HC in the barrier region, which resulted from the strong P z hybridization between Mg and N. According to the theoretical results, they prepared an Al 0.63 Ga 0.37 N/Al 0.51 Ga 0.49 N SL structure and obtained high-efficiency p-type doping, with an HC of 3.5 × 10 18 cm −3 and a low resistivity of 0.7 Ω cm.…”

Section: Epitaxial Growth and Doping Of Alganmentioning

confidence: 99%

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

et al. 2021

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Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal–semiconductor–metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions.

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Section: Epitaxial Growth and Doping Of Alganmentioning

confidence: 99%

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

et al. 2021

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“…They include the low solubility of acceptor dopants in AlGaN, the strong self-compensation effect resulting from the donor-like native defects, and the high AE of the Mg acceptor [68] . In recent years, many methods have been developed for increasing the solubility of Mg and reducing the AE of Mg in AlGaN p-doping of AlGaN, including delta doping, modulation doping, SL doping, co-doping, polarization-assisted doping, and multidimensional doping [69][70][71][72][73][74][75][76] .…”

Section: P-doping Of Alganmentioning

confidence: 99%

Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection

Liu

Zhou

2022

Chin. Opt. Lett.

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Solar-blind ultraviolet photodetectors (SBPDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. Aluminum gallium nitride (AlGaN), a kind of representative III-nitride semiconductor, has promising prospects in solar-blind photodetection owing to its tunable wide bandgap and industrial feasibility. Considering the high defect density in the AlGaN epilayer directly grown on a sapphire substrate, employing an AlN/sapphire template turns out to be an effective method to achieve a high-quality AlGaN epilayer, thereby enhancing the SBPD performances. In recent years, a variety of remarkable breakthroughs have been achieved in the SBPDs. In this paper, the progress on photovoltaic AlGaN-based SBPDs is reviewed. First, the basic physical properties of AlGaN are introduced. Then, fabrication methods and defect annihilation of the AlN/sapphire template are discussed. Various photovoltaic SBPDs are further summarized, including Schottky barrier, metal-semiconductor-metal, p-n/p-i-n and avalanche photodiodes. Furthermore, surface modification and photoelectrochemical cell techniques are introduced. Benefitting from the development of fabrication techniques and optoelectronic devices, photovoltaic AlGaN photodiodes exhibit a promising prospect in solar-blind ultraviolet photodetection.

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“…Results showed that the substituted Ca Ga became an effective acceptor, and the doped GaN exhibited the properties of a p‐type semiconductor. Aid et al [ 11 ] performed preheat annealing and laser annealing methods to study the transport properties of Mg‐injected GaN. The Mg‐doped GaN system formed a low resistivity and a high hole mobility under preheat annealing conditions.…”

Section: Introductionmentioning

confidence: 99%

First‐Principles Study of the Effects of Interstitial H and Point Vacancies on the p‐Type of Conductive Properties of Be/Mg/Ca‐Doped GaN

Yin

Hou

Chen

2021

Physica Status Solidi (b)

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Obtaining a reliable positive‐type (p‐type) GaN semiconductor is difficult because of the unipolarity of GaN. This difficulty is one of the bottlenecks restricting the development of GaN‐based optoelectronic devices. To address this problem, this paper adopted the method of generalized gradient approximation (GGA) plane wave ultrasoft pseudopotential based on the framework of density functional theory to construct Ga35MN36, Ga34MN36, and Ga34MHiN36 (M = Be/Mg/Ca; Hi = interstitial hydrogen) models. Ga35MN35 and Ga35MHiN35 (M = Be/Mg/Ca) models were also constructed. Results of our calculations indicated that the Ga35MN35 and Ga35MHiN35 (M = Be/Mg/Ca) models cannot achieve a p‐type doping system. Furthermore, the formation energy of Ga34MN36 and Ga34MHiN36 (M = Be/Mg/Ca) systems was greater under Ga‐rich conditions than that under N‐rich conditions, indicating that both doping systems more readily formed and had a more stable structure under N‐rich conditions. Moreover, the formation energy of Ga34MHiN36 (M = Be/Mg/Ca) system was lower than that of Ga34MN36 (M = Be/Mg/Ca) system, and the existence of interstitial H proved to be beneficial to the improvement in system stability. The Ga34CaHiN36 system had the largest hole mobility and the best conductivity. Therefore, the Ga34CaHiN36 system is an ideal material for the application of conductive GaN devices. This study provides guidance into the preparation of p‐type conductive GaN materials.

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Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing

Cited by 21 publications

References 20 publications

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection

First‐Principles Study of the Effects of Interstitial H and Point Vacancies on the p‐Type of Conductive Properties of Be/Mg/Ca‐Doped GaN

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