Boron diffusion and activation in polysilicon multilayer films for P+ MOS structure: Characterization and modeling

Mahamdi, R.; Saci, L.; Mansour, F.; Temple‐Boyer, Pierre; Scheid, E.; Jalabert, Laurent

doi:10.1016/j.mejo.2008.08.003

Cited by 7 publications

(3 citation statements)

References 9 publications

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“…Two related processes limit the realization of this goal: (i) the enhanced redistribution of the B during the thermal dopant‐activation annealing, which causes B penetration through thin oxides from the p + poly‐Si gate into the underlying layers 3, and (ii) the formation of electrically inactive B clusters and B precipitates 4,5, which decreases the dopant activation rate. The use of low‐energy doping methods, co‐doping techniques, low thermal annealing temperatures, short annealing times, amorphous‐silicon layers, and thin Nitrogen‐Doped‐Silicon (NiDoS) layers have been practiced to avoid the doping depletion of p + polysilicon gate at the oxide interface 6–8. Currently, significant research efforts are focused on improving the B activation and reducing fast B diffusion behaviour; problem common to all the practiced methods and technics.…”

Section: Introductionmentioning

confidence: 99%

Complex boron redistribution kinetics in strongly doped polycrystalline‐silicon/nitrogen‐doped‐silicon thin bi‐layers

Abadli

Mansour

Pereira

2012

Cryst. Res. Technol.

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We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 • C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P + ) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 • C and 700 • C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model.

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Section: Introductionmentioning

confidence: 99%

Complex boron redistribution kinetics in strongly doped polycrystalline‐silicon/nitrogen‐doped‐silicon thin bi‐layers

Abadli

Mansour

Pereira

2012

Cryst. Res. Technol.

Self Cite

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“…Several solutions have been proposed in MOS structure such as replacing the Si oxide layer by high dielectric permittivity materials, [8][9][10] varying the elaboration method, the doping techniques and thermal annealing [11][12][13] or using multilayer gate transistors. 14) In a previous work, we studied the influence of low temperature annealing durations on B diffusion in multilayer B-doped polycrystalline silicon (poly-Si) (poly1)/undoped amorphous silicon (a-Si) (poly2)/Si oxide (SiO 2 ) deposited by LPCVD. 14) We showed that the B diffusion depths are small enough not to reach the poly2/ oxide interface at annealing temperature bellow 700 C. We also showed in another works that in-situ N-doped amorphous Si layers (NIDOS) are efficient B diffusion barriers.…”

Section: Introductionmentioning

confidence: 99%

“…14) In a previous work, we studied the influence of low temperature annealing durations on B diffusion in multilayer B-doped polycrystalline silicon (poly-Si) (poly1)/undoped amorphous silicon (a-Si) (poly2)/Si oxide (SiO 2 ) deposited by LPCVD. 14) We showed that the B diffusion depths are small enough not to reach the poly2/ oxide interface at annealing temperature bellow 700 C. We also showed in another works that in-situ N-doped amorphous Si layers (NIDOS) are efficient B diffusion barriers. 11,[15][16][17] Based on these results, we have studied a new multilayer structure, in which the undoped a-Si (poly2) is substituted by a NIDOS layer, to further reduce the B diffusion.…”

Section: Introductionmentioning

confidence: 99%

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

Saci

Mahamdi

Mansour

et al. 2011

Jpn. J. Appl. Phys.

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The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B–N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

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Progress with passivation and screen-printed metallization of Boron-doped monoPoly™ layers

et al. 2022

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Boron diffusion and activation in polysilicon multilayer films for P+ MOS structure: Characterization and modeling

Cited by 7 publications

References 9 publications

Complex boron redistribution kinetics in strongly doped polycrystalline‐silicon/nitrogen‐doped‐silicon thin bi‐layers

Complex boron redistribution kinetics in strongly doped polycrystalline‐silicon/nitrogen‐doped‐silicon thin bi‐layers

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

Progress with passivation and screen-printed metallization of Boron-doped monoPoly™ layers

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