Progress with passivation and screen-printed metallization of Boron-doped monoPoly™ layers

Padhamnath, Pradeep; Nampalli, Nitin; Khanna, Anuradha; Balaji, Nagarajan; Aberle, Armin G.; Duttagupta, Shubham

doi:10.1016/j.solener.2021.11.015

Cited by 18 publications

(8 citation statements)

References 128 publications

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“…In addition, the FFT image can be used to determine the angle to the nearest (111) plane. As shown in Figure 4e, for example, the planes and (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) are orthogonal to the zone axis (332). With their orientation and by help of CrystTBox, the plane in the interface between the Ag and Si crystallites was determined to (4-2-3).…”

Section: Stopping Of Silver Crystallite At Poly-si/sio X Interfacementioning

confidence: 99%

“…On textured surfaces Ag grows to larger crystallites and massive etching into the base substrate is commonly observed at pyramid tips and edges. [19,20] The stopping mechanism of the poly-Si/SiO x interface is in those cases bypassed by a second or different etching mechanism. It remains unclear which properties of the poly-Si/SiO x stack influence the crystallite formation.…”

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confidence: 99%

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Silver Metallization with Controlled Etch Stop Using SiO_x Layers in Passivating Contacts for Improved Silicon Solar Cell Performance

Glatthaar,

Schmidt,

Hammud

et al. 2023

Solar RRL

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Metallization of polycrystalline‐silicon/silicon oxide (poly‐Si/SiOx) passivating contacts with fire‐through silver paste is a crucial process for implementation of passivating contacts in industrial manufacturing of solar cells. For a microscopic understanding of the metallization process, the contact forming interface between the Ag crystallites and the poly‐Si layer is investigated with high‐resolution transmission electron microscopy. For this purpose, multilayer atmospheric pressure chemical vapor deposition poly‐Si samples with a SiOx layer between the individual poly‐Si layers are fabricated, screen printed with a lead‐free Ag paste, and contact fired. Electron micrographs show that in this process the etching of the paste and the subsequent Ag crystallite formation is stopped by this interface with the SiOx layer. Additionally, energy‐dispersive X‐Ray mapping reveals the presence of an oxide layer around the Ag crystallites. This finding differs significantly from well‐investigated classical cell concepts with contact formation on diffused crystalline silicon. Moreover, an analysis of the Ag crystallite orientation in correlation to the neighboring Si crystallite orientation indicates no direct relationship. Finally, it is shown that the use of this multilayer approach is favorable for integration into a solar cell concept leading to a higher passivation quality at the metallized area and lower contact resistivity.

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Section: Stopping Of Silver Crystallite At Poly-si/sio X Interfacementioning

confidence: 99%

mentioning

confidence: 99%

Silver Metallization with Controlled Etch Stop Using SiO_x Layers in Passivating Contacts for Improved Silicon Solar Cell Performance

Glatthaar,

Schmidt,

Hammud

et al. 2023

Solar RRL

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“…4. [68][69][70][71][72] For consistency, recent approaches have centered on combining the development of the oxide layer with the subsequent preparation of the Si lm, such as via utilizing PECVD or LPCVB chambers. [73][74][75] In 2015, Moldovan et al used three oxidation methods: HNO 3 (nitric acid at 110 C); DIO 3 (ozone in deionized water); and UV/ O 3 (ultraviolet ozone) to prepare ultra-thin tunneling oxide layers and they characterized these based on iV OC .…”

Section: The Ultrathin Interfacial Silicon Oxide Layermentioning

confidence: 99%

Recent advancements in poly-Si/SiO_xpassivating contacts for high-efficiency silicon solar cells: technology review and perspectives

Zhou

Huang

et al. 2022

J. Mater. Chem. A

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“…In contrary to PECVD, APCVD enables a high throughput and completely blister-free poly-Si without any additional steps, such as annealing before SiNX:H deposition [3]. In this experiment APCVD (p) poly-Si is investigated, which has proven to be more challenging to obtain similarly low contact resistivities as for (n) poly-Si [6], [7], [8]. In the following, we will demonstrate a successful, low ohmic contact formation by the FPC approach.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Contact Resistivities on APCVD (p) Poly-Si for Fired Passivating Contacts

Okker,

Glatthaar,

Huster

et al. 2024

SiliconPV Conf Proc

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We investigate the properties of boron doped polycrystalline Si (poly-Si) deposited by atmospheric pressure chemical vapor deposition (APCVD) applied to fired passivating contacts (FPC), where no high temperature annealing takes place apart from the contact firing step. X-ray diffraction measurements show that the APCVD poly-Si is already partially crystallized directly after deposition and the crystallite size further increases during firing. Without metallization an implied open circuit voltage of up to 719 mV is achieved. Screen-printing with an Ag paste yields minimal contact resistivities of down to 1 mΩcm² at high firing temperatures. Furthermore, thicker poly-Si layers, accomplished by driving the same wafer multiple times through the APCVD system, generally correspond to lower contact resistivities for the FPC. This can partly be explained by an increasing crystallinity and conductivity during deposition due to the higher thermal budget during deposition for thicker layers as well as by a larger contact area for thicker poly-Si layers. Scanning electron microscopy on sample cross-sections show that almost the entire poly-Si layer is covered with Ag crystallites at high firing temperatures. For lower temperatures a lower density of Ag crystallites in the poly-Si is visible. Both findings hold for planar and textured surfaces.

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Progress with passivation and screen-printed metallization of Boron-doped monoPoly™ layers

Cited by 18 publications

References 128 publications

Silver Metallization with Controlled Etch Stop Using SiO_x Layers in Passivating Contacts for Improved Silicon Solar Cell Performance

Silver Metallization with Controlled Etch Stop Using SiO_x Layers in Passivating Contacts for Improved Silicon Solar Cell Performance

Recent advancements in poly-Si/SiO_xpassivating contacts for high-efficiency silicon solar cells: technology review and perspectives

Investigation of Contact Resistivities on APCVD (p) Poly-Si for Fired Passivating Contacts

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Progress with passivation and screen-printed metallization of Boron-doped monoPoly™ layers

Cited by 18 publications

References 128 publications

Silver Metallization with Controlled Etch Stop Using SiOx Layers in Passivating Contacts for Improved Silicon Solar Cell Performance

Silver Metallization with Controlled Etch Stop Using SiOx Layers in Passivating Contacts for Improved Silicon Solar Cell Performance

Recent advancements in poly-Si/SiOxpassivating contacts for high-efficiency silicon solar cells: technology review and perspectives

Investigation of Contact Resistivities on APCVD (p) Poly-Si for Fired Passivating Contacts

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Product

Resources

About

Silver Metallization with Controlled Etch Stop Using SiO_x Layers in Passivating Contacts for Improved Silicon Solar Cell Performance

Silver Metallization with Controlled Etch Stop Using SiO_x Layers in Passivating Contacts for Improved Silicon Solar Cell Performance

Recent advancements in poly-Si/SiO_xpassivating contacts for high-efficiency silicon solar cells: technology review and perspectives