Boron-content dependence of Fano resonances in p-type silicon

Gajić, R; Braun, Dieter; Kuchar, F.; Golubović, A.; Korntner, R.; Löschner, H.; Butschke, Jörg; Springer, Reinhard; Letzkus, Florian

doi:10.1088/0953-8984/15/17/340

“…The first state, being a discrete state, represents a hole in its acceptor ground state and one locally excited optical phonon. The second state, being a continuum, represents no phonons being created and a hole excited into the p 3/2 valence band 7. The Fano effect in p ‐type silicon has been observed in photoconductivity and Raman spectroscopy experiments 5, 7.…”

Section: Theorymentioning

confidence: 99%

“…The second state, being a continuum, represents no phonons being created and a hole excited into the p 3/2 valence band 7. The Fano effect in p ‐type silicon has been observed in photoconductivity and Raman spectroscopy experiments 5, 7. The asymmetry due to the zone center ( k = 0) optical phonon changes as a function of temperature, excitation wavelength, and doping concentration 5.…”

Section: Theorymentioning

confidence: 99%

Raman study of Fano interference in p‐type doped silicon

Burke

¹

,

Chan

²

,

Williams

³

et al. 2010

J Raman Spectroscopy

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As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of intervalence band transitions on the zone center optical phonon in heavily p-type doped silicon is studied by Raman spectroscopy for a wide range of excitation wavelengths extending from the red (632.8 nm) into the ultra-violet (325 nm). The asymmetry in the one-phonon Raman lineshape is attributed to a Fano interference involving the overlap of a continuum of electronic excitations with a discrete phonon state. We identify a transition above and below the one-dimensional critical point (EΓ 1 = 3.4 eV) in the electronic excitation spectrum of silicon. The relationship between the anisotropic silicon band structure and the penetration depth is discussed in the context of possible device applications.

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“…Both these phenomena have been related to the variation of Boron concentration in the diamond structure [13,16]. Ager et al [16] considered that the Fano interference of the Raman phonon in heavily B-doped diamond due to the transitions between impurity band and valence band states as the more likely mechanism, while in heavily boron-doped Silicon intervalence band, electronic Raman scattering generates the Fano-type interference [17,18].…”

Section: Figurementioning

confidence: 99%

Electrochemically induced surface modifications in boron-doped diamond films: a Raman spectroscopy study

Ricci

¹

,

Anedda

²

,

Carbonaro

³

et al. 2005

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“…The first state, being a discrete state, represents a hole in its acceptor ground state and one locally excited optical phonon. The second state, being a continuum, represents no phonons being created and a hole excited into the p 3/2 valence band [7]. The Fano effect in ptype silicon has been observed in photoconductivity and Raman spectroscopy experiments [5,7].…”

Section: Theorymentioning

confidence: 99%

Raman study of Fano interference in p-type doped silicon

Burke,

Chan,

Williams

et al. 2009

Preprint

0

View full text Add to dashboard Cite

As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of intervalence band transitions on the zone center optical phonon in heavily p-type doped silicon is studied by Raman spectroscopy for a wide range of excitation wavelengths extending from the red (632.8 nm) into the ultra-violet (325 nm). The asymmetry in the one-phonon Raman lineshape is attributed to a Fano interference involving the overlap of a continuum of electronic excitations with a discrete phonon state. We identify a transition above and below the one-dimensional critical point (EΓ 1 = 3.4 eV) in the electronic excitation spectrum of silicon. The relationship between the anisotropic silicon band structure and the penetration depth is discussed in the context of possible device applications.

show abstract

Boron-content dependence of Fano resonances in p-type silicon

Cited by 9 publications

References 23 publications

Raman study of Fano interference in p‐type doped silicon

Raman study of Fano interference in p‐type doped silicon

Electrochemically induced surface modifications in boron-doped diamond films: a Raman spectroscopy study

Raman study of Fano interference in p-type doped silicon

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