2005
DOI: 10.1016/j.tsf.2004.11.169
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Electrochemically induced surface modifications in boron-doped diamond films: a Raman spectroscopy study

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Cited by 21 publications
(15 citation statements)
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“…One sharp peak at 1332 cm -1 due to sp 3 C-C bond can be observed in as-deposited diamond film, which implies that a high quality diamond film was deposited on silicon by MPCVD. After amination for 15 min, the peak in 1500 cm -1 is increased slightly, which originates from an increase in the nondiamond carbon content on the surface [15] . For the most part, however, the microstructure of the aminated diamond was not significantly affected by the treatment.…”
Section: Film Qualitymentioning
confidence: 96%
“…One sharp peak at 1332 cm -1 due to sp 3 C-C bond can be observed in as-deposited diamond film, which implies that a high quality diamond film was deposited on silicon by MPCVD. After amination for 15 min, the peak in 1500 cm -1 is increased slightly, which originates from an increase in the nondiamond carbon content on the surface [15] . For the most part, however, the microstructure of the aminated diamond was not significantly affected by the treatment.…”
Section: Film Qualitymentioning
confidence: 96%
“…Compared to the sample without boron, intensity of the characteristic peak for diamond at 1332 cm À 1 reduces remarkably. At the same time, new broad Raman peaks around 500 and 1220 cm À 1 becomes noticeable when the B 2 H 6 /CH 4 ratio exceeds 1%, which can be related to the locally disordered structures induced by heavy boron doping [12][13][14]. Fig.…”
Section: Resultsmentioning
confidence: 84%
“…The peak shift to higher wave numbers is due to the residual compressive stress [13]. Furthermore, two obvious wide peaks appear around 1220 and 1500 cm −1 , which are originated from the Fano interaction [14] and the appearance of graphite, respectively. The conclusion is consistent with many other authors [15][16].…”
Section: Morphology and Crystal Structure Of The Electrodesmentioning
confidence: 95%