Boric acid as converter material for semiconductor neutron detector- A GEANT4 simulation study

Parida, Manoj Kumar; Sundari, S. Tripura; Prabakar, K.

doi:10.1016/j.nima.2019.162978

Cited by 8 publications

(19 citation statements)

References 24 publications

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Section: B Detector Modeling Methodology In Geant4mentioning

confidence: 99%

“…GEANT4 (GEometry AND Tracking) is an open-source toolkit based on the Monte Carlo technology [38], [39], [40], with functions such as geometry definition, particle tracking, and ion energy estimation [39], [40], and has been widely used to analyze the transport of particles through matter [39], [40]. Users can create SiC neutron detectors of different shapes through GEANT4's Geometry class and G4Replica function [38], [39], [40] and then define the SiC region as a "sensitive volume" through the G4 Sensitive Detector class for recording ion transport and estimating energy deposition [38], [39], [40]. The thermal neutron source in the simulation can be defined by the general particle source (GPS) class [38], [39], [40], and the radiation capture reaction between thermal neutrons and 10 B/ 6 LiF can be described by the builtin high-precision neutron physics model (QGSP-BERT-HP) of the GEANT4 toolkit [39], [40].…”

Section: B Detector Modeling Methodology In Geant4mentioning

confidence: 99%

“…Users can create SiC neutron detectors of different shapes through GEANT4's Geometry class and G4Replica function [38], [39], [40] and then define the SiC region as a "sensitive volume" through the G4 Sensitive Detector class for recording ion transport and estimating energy deposition [38], [39], [40]. The thermal neutron source in the simulation can be defined by the general particle source (GPS) class [38], [39], [40], and the radiation capture reaction between thermal neutrons and 10 B/ 6 LiF can be described by the builtin high-precision neutron physics model (QGSP-BERT-HP) of the GEANT4 toolkit [39], [40].…”

Section: B Detector Modeling Methodology In Geant4mentioning

confidence: 99%

Section: B Detector Modeling Methodology In Geant4mentioning

confidence: 99%

“…Models of neutron detectors created by other groups based on the Monte Carlo toolkit consist of a conversion material solid and a semiconductor diode detector solid [7], [20], [34], [37], [38]. The neutron conversion materials are usually 10 B or 6 LiF solids, while the SiC diode detectors are usually composed of front ohmic contact electrode solids, SiC material solids, and back ohmic contact electrode solids [7], [20], [38]. In actual manufacturing, the front p-type ohmic contact electrode of the SiC diode was usually made of Ti with a thickness of 30 nm and Al with a thickness of 100 nm, and the backside n-type ohmic contact electrode was usually made of Ni with a thickness of 150 nm [41], [42], [43], [44], [45].…”

Section: B Detector Modeling Methodology In Geant4mentioning

confidence: 99%

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Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

et al. 2023

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In this article, we propose a double-trenchtype silicon carbide (SiC) neutron detector and model it using the concept of a unit cell on the GEANT4 platform. When the low-level discriminator (LLD) value was fixed at 300 keV, the structural parameters of this double-trench-type SiC neutron detector were optimized to maximize the intrinsic detection efficiency. Compared with the single trench type, the doubletrench-type SiC neutron detector can significantly improve the neutron intrinsic detection efficiency within a limited trench depth, which was especially suitable for the current technological status that SiC materials can only be used for shallow trench etching. Apart from optimizing the structural parameters, the energy deposition spectra in the SiC detector region by the generated secondary charged particles upon thermal neutron interaction in neutron conversion materials ( 10 B and 6 LiF) have also been estimated. It can be found that the double-trench-type SiC neutron detector counts significantly increased in the low-energy range, while the counts in the high-energy range are only slightly decreased. This is also the essential reason why the intrinsic detection efficiency of the double-trench-type SiC neutron detector was significantly improved compared to the single-trench-type SiC neutron detector.

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Section: B Detector Modeling Methodology In Geant4mentioning

confidence: 99%

Section: B Detector Modeling Methodology In Geant4mentioning

confidence: 99%

Section: B Detector Modeling Methodology In Geant4mentioning

confidence: 99%

Section: B Detector Modeling Methodology In Geant4mentioning

confidence: 99%

Section: B Detector Modeling Methodology In Geant4mentioning

confidence: 99%

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Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

et al. 2023

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GEANT4 Simulation Studies for Neutron Detection Using GEM Based Gas Detector

Sharma,

Dubey

2024

Springer Proceedings in Physics

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Investigation of thermal neutron detection efficiency of Boron Carbide converter material using GEANT4 simulation for different types of detector configurations

et al. 2022

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A lot of advancement in the field of semiconductors has made it possible to design a solid state neutron detector. They are small in size and compact, have economical bulk fabrications, require low power for their operation. Hence it can act as a plausible alternative to traditional neutron detector such as gas filled and scintillation detectors. It has been observed that many factors like the choice of converter material, LLD settings and geometrical configurations have an impact on the thermal neutron detection efficiency of solid state neutron detector design. Therefore in the present research work, a systematic GEANT4 simulation have been performed on estimating the simulated thermal neutron detection efficiency (η) for five different solid state detector geometrical configurations design with Boron Carbide (10B4C) as a converter material. These detectors geometry configurations designs are planar, rectangular parallel trenches, cylindrical perforation, stack and spherical (single and multi-layer). The objective of the simulations was to obtain critical geometrical features for which the efficiency reaches the maximum value, of the given detector configurations. The influence of the different enrichment levels of 10B (20% to 80%) in Boron Carbide and different Low-Level Discriminator (LLD) value setting (from 100 keV to 700 keV) on the simulated thermal neutron detection efficiency was also investigated. Finally, the simulated multi channel analyzer spectra or in other words histoplots were obtained for all the detector configurations.

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Boric acid as converter material for semiconductor neutron detector- A GEANT4 simulation study

Cited by 8 publications

References 24 publications

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

GEANT4 Simulation Studies for Neutron Detection Using GEM Based Gas Detector

Investigation of thermal neutron detection efficiency of Boron Carbide converter material using GEANT4 simulation for different types of detector configurations

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