Borazine Thermal Decomposition in Unsaturated Vapor

Zavgorodnii, A. S.; Timoshkin, Alexey Y.

doi:10.1134/s1070363218120046

Cited by 5 publications

(2 citation statements)

References 14 publications

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“…29 Obviously, greater depth of B species in Omambac et al's regime than that in our case qualitatively indicates a larger B concentration, enabling the B segregation with a sufficient driving force, which can be ascribed to the higher efficiency of B dissolution by directly decomposing borazine rather than h-BN due to their significant difference in thermodynamic stability. 30 Accordingly, the main reason for the absence of segregated borophene in our case is considered to be the relatively low amount of B species at near-surface regions because of the low efficiency of B dissolution by decomposing h-BN.…”

Section: ■ Results and Discussionmentioning

confidence: 85%

An Ammonization-Based Transformation of Hexagonal Boron Nitride on Ir(111) from Surface to Near-Surface Regions

et al. 2021

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Epitaxial growth of thin films on solid substrates significantly depends on the surface structure, including outmost and near-surface reconstruction. Here, using in situ surface measurements, we show an ammonization-based hexagonal boron nitride (h-BN) transformation on the Ir(111) substrate, from surface to near-surface regions. Near-surface B dopants are driven to segregate onto the surface induced by N atoms from NH 3 dehydrogenation; thus, B species react with N species to form h-BN overlayers on the surface, i.e., the ammonization growth route. Further, growth dynamics in near-surface-dependent ammonization and normal chemical vapor deposition growth are systematically investigated. The activation energy of the former is 0.53 eV higher than the latter. The difference in growth barriers is attributed to the diffusion of B species from nearsurface to surface regions, causing the growth mechanism changes from reaction-limited aggregation to diffusion-limited aggregation. In addition, h-BN overlayers are converted into boron oxide (B 2 O 3 ) in an O 2 atmosphere and reverse back to h-BN by reacting with NH 3 on the surface; thus, a reversible structural transformation on the surface was achieved by successive oxidation and ammonization. This work gains a deep understanding of the h-BN conversion from surface to near-surface regions and provides valuable insights into their evolution dynamics.

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Section: ■ Results and Discussionmentioning

confidence: 85%

An Ammonization-Based Transformation of Hexagonal Boron Nitride on Ir(111) from Surface to Near-Surface Regions

et al. 2021

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“…Both experimental [5,6] and theoretical [7,8] works have been performed widely. The thermal decomposition of B 3 N 3 H 6 in unsaturated vapor has been studied [9], showing that the gaseous B 3 N 3 H 6 was decomposed on the reaction vessel surface along with the formation of volatile intermediates. The nature of chemical bond [10], ring current strengths [11], anion-π interactions [12] of B 3 N 3 H 6 were investigated, indicating its wide applications such as active molecule for electrodes [13], reactant for boron nitride nanowalls [14], low-dimensional spin lters [15,16].…”

Section: Introductionmentioning

confidence: 99%

Electronic, optical, and vibrational properties of B3N3H6 from first-principles calculations

Gan¹,

Qin

Liu

et al. 2021

J Mol Model

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The electronic, optical and vibrational properties of B 3 N 3 H 6 have been calculated by means of rstprinciples density functional theory (DFT) calculations within the generalized gradient approximation (GGA) and the local density approximation (LDA). The calculated structural parameters of B 3 N 3 H 6 are in good agreement with experimental work. With the band structure and density of states (DOS), we have analyzed the optical properties including the complex dielectric function, refractive index, absorption, conductivity, loss function and re ectivity. By the contrast, it is found that on the (001) component and (100) component have obvious optical anisotropy. Moreover, the vibrational properties have been obtained and analyzed.

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Ni(111) Substrate Engineering for the Epitaxial Chemical Vapor Deposition Growth of Wrinkle-Free Multilayer Rhombohedral Boron Nitride Films

Tailpied,

Andrieux-Ledier,

Fossard

et al. 2024

Crystal Growth & Design

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Here, we report on the low-pressure chemical vapor deposition synthesis of multilayer BN films on single crystalline Ni(111) films. We highlight the crucial role of substrate pretreatment to stabilize the Ni(111) thin film on YSZ/Si(111) prior to BN precursor exposure at high temperature. We show that an in situ double-step thermal process under primary vacuum allows us to obtain clean and flat nickel surfaces suitable for homogeneous BN growth. Scanning and transmission electron microscopies, Raman spectroscopy, and atomic force microscopy have been used to characterize statistically the BN film from the atomic to the millimeter scale. We show that we obtain a sp 2 -hybridized BN film with a rhombohedral ABC stacking sequence. The 3 nm-thick film is continuous at the millimeter scale, with a mean roughness of 0.9 nm and no wrinkles.

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Borazine Thermal Decomposition in Unsaturated Vapor

Cited by 5 publications

References 14 publications

An Ammonization-Based Transformation of Hexagonal Boron Nitride on Ir(111) from Surface to Near-Surface Regions

An Ammonization-Based Transformation of Hexagonal Boron Nitride on Ir(111) from Surface to Near-Surface Regions

Electronic, optical, and vibrational properties of B3N3H6 from first-principles calculations

Ni(111) Substrate Engineering for the Epitaxial Chemical Vapor Deposition Growth of Wrinkle-Free Multilayer Rhombohedral Boron Nitride Films

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