Borane-Catalyzed Room-Temperature Hydrosilylation of Alkenes/Alkynes on Silicon Nanocrystal Surfaces

Purkait, Tapas K.; Iqbal, Muhammad Waseem; Wahl, Maike H.; Gottschling, Kerstin; González, Christina M.; Islam, Muhammad Amirul; Veinot, Jonathan G. C.

doi:10.1021/ja510120e

Cited by 82 publications

(132 citation statements)

References 41 publications

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“…The optical response of the epitaxial layer was described with a Drude-like free carrier response from which the carrier relaxation time and electrical resistivity could be extracted. Extracted doping levels approached 1.7 × 10 19 atoms/cm 3 Ldiode, showing that the samples annealed at 100 mJ/cm 2 exhibited very low values of n, which may be attributed to the absence of implant damage. .…”

Section: Monolayer Doping On Gementioning

confidence: 90%

“…All samples were annealed at 580 °C. Active carrier concentrations approached 2 × 10 19 atoms/cm 3 . The study showed that SOD of Ge is not straightforward, and there are numerous practical process issues still to be resolved.…”

Section: Spin-on Doping In Gementioning

confidence: 94%

“…In order to estimate the free electron concentration after Sb diffusion, accumulation-type GeOI nMOSFETS were fabricated and the threshold voltage was monitored before and after doping. The electron concentration after Sb diffusion was observed to be approximately 3 × 10 18 atoms cm 3 . Ultrathin nMOSFETS were fabricated and doped using the Sb SOD process.…”

Section: Spin-on Doping In Gementioning

confidence: 96%

“…Due to the rich and established chemistry that can be carried out on the semiconductor surfaces, many aspects of the MLD process such as the initial surface preparations, molecular footprints, choice of capping layer and the rapid-thermal-anneal recipe can all be optimised and tailored to the particular process, material and required dopant concentration and depth. [2][3][4][5][6][7][8][9][10][11][12] Figure 1 displays an example of a typical MLD process using commercially available triallylphosphine. Ho et al were the first to report the MLD process on Si where allylboronic acid pinacol ester in a 25 % v/v solution in mesitylene was used to passivate a H-terminated Si surface with a boroncontaining monolayer.…”

Section: Monolayer Doping On Simentioning

confidence: 99%

“…[62] They first applied the process to bulk GeOI before transferring to MOSFETS. After annealing at 650 °C, peak chemical concentrations approached 1 × 10 23 atoms/cm 3 . In order to estimate the free electron concentration after Sb diffusion, accumulation-type GeOI nMOSFETS were fabricated and the threshold voltage was monitored before and after doping.…”

Section: Spin-on Doping In Gementioning

confidence: 99%

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Chemical approaches for doping nanodevice architectures

et al. 2016

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Access to the full text of the published version may require a subscription. after most spin-on-doping processes which are often difficult to remove. In-situ doping of nanostructures is especially common for bottom-up grown nanostructures but problems associated with concentration gradients and morphology changes are commonly experienced. Monolayer doping (MLD) has been shown to satisfy the requirements for extended defect-free, conformal and controllable doping on many materials ranging from traditional silicon and germanium devices to emerging replacement materials such as III-V compounds but challenges still remain, especially with regard to metrology and surface chemistry at such small feature sizes. This article summarises and critically assesses developments over the last number of years regarding the application of gas and solution phase techniques to dope silicon-, germanium-and III-V-based materials and nanostructures to obtain shallow diffusion depths coupled with high carrier concentrations and abrupt junctions. Rights3

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Section: Monolayer Doping On Gementioning

confidence: 90%

Section: Spin-on Doping In Gementioning

confidence: 94%

Section: Spin-on Doping In Gementioning

confidence: 96%

Section: Monolayer Doping On Simentioning

confidence: 99%

Section: Spin-on Doping In Gementioning

confidence: 99%

See 3 more Smart Citations

Chemical approaches for doping nanodevice architectures

et al. 2016

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Lewis Acid Induced Functionalization of Photoluminescent 2D Silicon Nanosheets for the Fabrication of Functional Hybrid Films

Helbich

Lyuleeva

Marx

et al. 2017

Adv Funct Materials

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Various Lewis acids are found to efficiently catalyze hydrosilylation reactions of hydride‐terminated 2D silicon nanosheets at room temperature. The hydride‐terminated nanosheets can be functionalized with a variety of unsaturated functional substrates and still possess their unique characteristic (opto)electronic properties (e.g., photoluminescence). This is demonstrated by successfully implementing the readily functionalized materials into new silicon/semiconducting polymer‐based field‐effect transistors (FETs). Surface modification of the freestanding silicon nanosheets opens new possibilities to form highly homogeneous blends with the already broadly used conventional polymers poly(3‐hexylthiophene‐2,5‐diyl). The consequential combination of the different properties of the materials enables the enhancement of the sensitivity of the solution‐gated FETs and increases the transconductance of the operating device.

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Quaternary Ammonium Salts: Catalysts for Hydrosilylation of Alkynes with Hydrosilanes

et al. 2023

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Mixing i‐PrI and DABCO in solvent EtCN gave two quaternary ammonium salts (QASs) quantitatively, one of which is monocationic (QAS‐1) and the other is dicationic (QAS‐2). These QASs were found to catalyze hydrosilylation of alkynes with hydrosilanes (HAH) without the aid of metal and metalloid catalysts. This organocatalysis can be applied to a variety of alkynes: terminal/internal aryl and alkyl alkynes with/without a functional group. With dihydrosilanes (H2Si), the HAH occurred with high E‐selectivity through syn addition, which was exclusively observed when using terminal alkyl alkynes, irrespective of a hydrosilane used. A scalable HAH is also feasible. The H−Si unit remaining in alkenylsilanes derived from H2Si is available for dehydrogenative alkynylation and N‐heteroarylation under zinc–pyridine catalysis. This synthetic application delivers unique silicon compounds that have, for instance, alkyl, aryl, alkenyl, and alkynyl groups in a single molecule. Mechanistic studies suggested that alkynes activated by QASs irreversibly react with hydrosilanes that become more nucleophilic by the coordination of EtCN. A radical pathway is unlikely. The QAS catalysts can be recovered and reused at least 5 times.

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Borane-Catalyzed Room-Temperature Hydrosilylation of Alkenes/Alkynes on Silicon Nanocrystal Surfaces

Cited by 82 publications

References 41 publications

Chemical approaches for doping nanodevice architectures

Chemical approaches for doping nanodevice architectures

Lewis Acid Induced Functionalization of Photoluminescent 2D Silicon Nanosheets for the Fabrication of Functional Hybrid Films

Quaternary Ammonium Salts: Catalysts for Hydrosilylation of Alkynes with Hydrosilanes

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