Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias

Abstract

Spin-resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in modern spin electronics. However, the core process of the electron symmetry filtering breaks down under applied bias, dramatically reducing the TMR above 0.5 V. This strongly hampers the application range of MTJs. To circumvent the problem, resonant tunneling between ferromagnetic electrodes through quantum well states in thin layers has been used so far. This mechanism, however, is mainly effective at low temperatures. Here, a fundamentally different approach is demonstrated, providing a strong TMR boost under applied bias in V/MgO/Fe/MgO/Fe/Co hybrids. This pathway uses spin orbit coupling (SOC) controlled interfacial states in vanadium, which contrary to the V(001) bulk states are allowed to tunnel to Fe(001) at low biases. The experimentally observed strong increase of TMR with bias is modelled using two nonlinear resistances in series, with the low bias conductance of the first (V/MgO/Fe) element being boosted by the SOC-controlled interfacial states, while the conductance of the second (Fe/MgO/Fe) junctions controlled by the relative alignment of the two ferromagnetic layers. These results pave a way to unexplored and fundamentally different spintronic device schemes, with tunneling magnetoresistance uplifted under applied electric bias.