Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer

Abliz, Ablat; Wang, Jingli; Xu, Lei; Wan, Da; Liao, Lei; Ye, Cong; Liu, Chuansheng; Jiang, Changzhong; Chen, Huipeng; Guo, Tao

doi:10.1063/1.4952445

Cited by 62 publications

(50 citation statements)

References 27 publications

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“…The back channel can also act as a capping layer to protect the underlying channel from influence by the ambient environment or damage upon exposure to etchants during the electrode patterning. To date, the bilayer channel structure has made great success, especially in the improvement of TFT μ FE and operational stability compared to single‐channel devices . By inserting an ultrathin InSnZnO (ITZO) layer, Rim et al reported solution‐processed heterojunction ITZO/IGZO TFTs with a high μ FE of over 20 cm 2 V −1 s −1 , a high I on / I off of 10 7 , and a Δ V T of 5 V after 10 4 s positive bias stress test .…”

Section: Metal Oxide Tftsmentioning

confidence: 99%

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Zhu

Shin

Liu

et al. 2019

Adv Funct Materials

158

130

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Studies on printable semiconductors and technologies have increased rapidly over recent decades, pioneering novel applications in many fields, such as energy, sensing, logic circuits, and information displays. The newest display technologies are already turning to metal oxide semiconductors, i.e., indium gallium zinc oxide, for the improvements needed to drive active matrix organic light-emitting diodes. Convenience and portability will be realized with flexible and wearable displays in the future. This report summarizes recent progress on the development of solution-processed thin film transistors, especially those deposited at low temperatures for next-generation flexible smart displays. The first part provides an overview on the history and current status of displays. Then, recent advances in state-of-the-art solution-processed transistors based on different semiconductors are presented, including metal oxides, organic materials, perovskites, and carbon nanotubes. Finally, conclusions are drawn and the remaining challenges and future perspectives are discussed. a large common cathode (opaque metal). This means that the light emission goes through the backplane and the TFT arrays are able to block the light, resulting in the reduced emission fill factor of the display. This mode is also called bottom emission. One effective way to avoid the light obstruction from TFTs in the backplane is to use top-emitting OLEDs, which have a transparent cathode. [2] In 2004, Pennsylvania State University demonstrated the first flexible phosphorescent AMOLED display with hydrogenated amorphous silicon on a 4 in. polyimide (PI) substrate. [7] One year later, a 48 × 48 organic pentacene TFT-driven AMOLED display on a polyethylene terephthalate (PET) substrate was reported by the same group. [8] In 2005, by employing a top-emission structure, researchers at Sony Corp. demonstrated the first full-color imaging on a flexible AMOLED with a pixel resolution of 80 ppi. [9] In 2013, Samsung Electronics showed curved OLED TVs for the first time. Two years later, the same company unveiled a smartphone with a curved edge display (Galaxy S6 Edge), which used touch sensors to improve the user interface and device design. Most recently, LG Display succeeded in developing the world's first large-size 77 in. transparent and flexible OLED display, which could be rolled up to a radius of 80 mm. [10] The ideal flexible AMOLED backplane should be robust, rollable/bendable, capable of complementary metal oxide semiconductor (CMOS) operation, and should lend itself to low-cost manufacturing. To advance toward next-generation flexible AMOLED displays, two key technological goals should be satisfied during fabrication. One is to develop TFT backplanes with good uniformity, stability, and electrical performance. Amorphous silicon (a-Si) TFTs are well known for their uniform electrical characteristics (µ FE < 1 cm 2 V −1 s −1 and I on /I off > 10 6 ) and have achieved great success in flat-panel LCD displays. However, the relatively low µ FE and the lig...

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Section: Metal Oxide Tftsmentioning

confidence: 99%

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Zhu

Shin

Liu

et al. 2019

Adv Funct Materials

158

130

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“…The fabrication of the transparent bilayer InGaZnO:H/InGaZnO homojunction metal oxide thin film transistors (TFT) was reported by Abliz et al [134]. The bilayer structured device could enhance the mobility and instability issue of the indium gallium zinc oxide (InGaZnO) based TFTs [134].…”

Section: I-v Characteristics Of Opv Devices With the Planar Zno And Thementioning

confidence: 99%

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas¹

2018

NANO

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This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial interest in the research area of wide bandgap semiconductors due to their unique electrical, optical and structural properties. GaN and ZnO are important semiconductor materials with applications in blue and ultraviolet (UV) optoelectronics. Both materials have similar physical properties. GaN and ZnO as hybrid material have received much attention due to their unique potential applications. Several potential optical applications are being fabricated based on GaN and ZnO hybrid materials such as optical wave guide, light emitting diodes (LEDs), and laser diodes (LDs). The recent aspects of GaN and ZnO hybrid based devices are presented and discussed.

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“…Liu et al presented a high‐performance In 2 O 3 (front channel)/IZO (back channel) TFT, showing an increased μ FE of 37.9 cm 2 V −1 s −1 and thereafter a decreased subthreshold swing (SS) of 120 mV decade, where the thin (3–7 nm) In 2 O 3 layer was regarded as the main accumulation and transportation layer due to its amorphous structure and high μ FE (100 cm 2 V −1 s −1 ) . Abliz et al demonstrated electrical performance enhancement in a bilayer IGZO:H/IGZO TFT, achieving μ FE of 55.3 cm 2 V −1 s −1 and SS of 0.18 V decade by inserting an ultrathin (5 nm) hydrogenated IGZO layer to provide suitable carrier concentration and reduce the average trap density near the channel/insulator interface . Kim et al successfully fabricated the high‐performance oxide TFTs composed of the IZO (or InSnO) and IGZO active layers, showing μ FE of 51.3 cm 2 V −1 s −1 (104 cm 2 V −1 s −1 ), but the insight physics remained unexplored .…”

Section: Introductionmentioning

confidence: 99%

Defect Self‐Compensation for High‐Mobility Bilayer InGaZnO/In₂O₃ Thin‐Film Transistor

et al. 2019

Adv Elect Materials

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amorphous IGZO (a-IGZO) TFT was fabricated by Hosono and coworkers and presented impressive electron mobility and current on/off ratio. [10,11] Taking advantage of their excellent optical transparency, high mechanical flexibility, and especially low-temperature process feasibility, the amorphous oxide semiconducting (AOS) TFTs have triggered large scientific interests and industrial benefits, and can be widely used in active-matrix liquid crystal display, bio-and optical sensing fields, etc. [12] However, disordered structural network and high density of intrinsic defects in the AOS materials largely affect electrical performances (e.g., electron mobility and stability) of the TFTs and limit their industrial applications in next-generation electronic device platforms. To overcome these limitations, a notable strategy, i.e., stackedlayer channel combining different individual oxide semiconducting materials, has been proposed in recent years and successfully implemented to enhance the device performances. [13][14][15][16][17][18][19] Park and Lee reported a bilayer IZO/IGZO TFT with the field-effect mobility (μ FE ) of 47.7 cm 2 V −1 s −1 and threshold voltage (V TH ) of 1.57 V, where the mobility enhancement (i.e., ≈2.3 times higher than that of a single-layer IGZO TFT) was induced by a high electron density of the IGZO layer with electrons injected from the IZO layer of the stacked structure. [13] Liu et al. presented Here, the bilayer InGaZnO/In 2 O 3 thin-film transistors (TFTs) are deposited by radio-frequency magnetron sputtering at room temperature. A high field-effect mobility (μ FE ) of 64.4 cm 2 V −1 s −1 and a small subthreshold swing (SS) of 204 mV per decade are achieved in the bilayer-stack TFTs fabricated upon SiO 2 /Si substrate, with large improvement compared to the singlelayer InGaZnO and In 2 O 3 TFTs. Implementing HfO 2 and Si 3 N 4 as high-k gate dielectrics, μ FE and SS are correspondingly enhanced to be 67.5 and 79.1 cm 2 V −1 s −1 , and 85 and 92 mV per decade in the bilayer TFTs. Defect self-compensation effect is also revealed, i.e., (In) + + (O) − → In − O, while, respectively, considering the indium-and oxygen-related defects in InGaZnO and In 2 O 3 and exploring the numerical simulations in SILVACO/Atlas (for electrical performance) and Quantum Espresso (for physical analysis). The InO formation can result in a significant reduction in defect density (validated by the X-ray photoelectron spectra and low-frequency noise characterizations) and therefore improvement of μ FE and SS in the bilayerstack TFT. The important role of defect self-compensation mechanism while combining different individual channel layers in the oxide semiconducting TFTs is underlined and highly potential application in next-generation, fast-speed flexible displays is shown.

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Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer

Cited by 62 publications

References 27 publications

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Defect Self‐Compensation for High‐Mobility Bilayer InGaZnO/In₂O₃ Thin‐Film Transistor

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Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer

Cited by 62 publications

References 27 publications

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Defect Self‐Compensation for High‐Mobility Bilayer InGaZnO/In2O3 Thin‐Film Transistor

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Defect Self‐Compensation for High‐Mobility Bilayer InGaZnO/In₂O₃ Thin‐Film Transistor