Boolean logic function synthesis for generalised threshold gate circuits

Bawiec, Marek A.; Nikodem, Maciej

doi:10.1145/1629911.1629935

Cited by 6 publications

(2 citation statements)

References 9 publications

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“…In literature, two basic circuit structures were proposed – generalised TG (GTG) and multithreshold threshold gates (MTTGs). Our previous papers [14, 15] focused on the GTGs and we proposed efficient synthesis for those. However, these algorithms are not applicable to the MTTGs which differ in the operation mode and lack synthesis algorithms.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of multithreshold threshold gates based on negative differential resistance devices

Nikodem

2013

IET Circuits, Devices & Systems

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This study presents theoretical analysis and synthesis algorithm for multithreshold threshold gates (MTTGs) built of resonant tunnelling diodes (RTDs). The aim of the synthesis is to find a structure of an MTTG gate and relations between all the RTDs given an arbitrary Boolean function of n variables. The contribution of this study is 3-fold: first the authors formulate a functional model of the MTTG gate in which output is given as the difference of two min functions each taking weighed sums of input signals as arguments. Second, it is shown that any Boolean function can be represented as a min/max composition of hyperplanes (weighed sum of input signals) representing threshold functions. Later a procedure is proposed that transforms min/max composition to a difference of two min functions that corresponds to the MTTG structure. Finally, the authors show that the complexity of the resulting the MTTG gate depends on the number of thresholds k in the threshold decomposition of Boolean function and propose a dedicated threshold decomposition procedure that minimises the resulting number of thresholds. As a result, synthesised MTTG circuit is composed of at most (k + 1)(n + 1) RTD devices and (k +1)n switching elements.

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Section: Introductionmentioning

confidence: 99%

Synthesis of multithreshold threshold gates based on negative differential resistance devices

Nikodem

2013

IET Circuits, Devices & Systems

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“…GTG structure differs significantly since all but one RTD elements can have the same parameters (peak currents) and are activated by serial-parallel network of transistors implementing unate functions of up to n variables [2], [11], [13], [14]. Therefore GTG gate structure broadens capabilities of MTTG gates enabling to implement the same functionality by using smaller number of NDR elements and in less complex gate structure.…”

Section: Introduction and Related Workmentioning

confidence: 99%