Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method

Martínez, Francisco; Ruiz‐Merino, Ramón; Prado, A. del; Andrés, E. San; Mártil, I.; González-Dı́az, G.; Jeynes, C.; Barradas, N.P.; Wang, L; Reehal, H. S.

doi:10.1016/j.tsf.2003.12.084

Cited by 26 publications

(24 citation statements)

References 13 publications

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“…It can be seen from the figure that the trends are clear, that the density of Si-H bonds decreases as the SiH 4 /N 2 flow ratio. This is in agreement with Martinez's results [15]. However, the density of N-H bonds follows the opposite trend.…”

Section: IIIsupporting

confidence: 93%

Low Hydrogen Component SiN Films by PECVD for Low Propagation Loss Waveguide

Mao

Tao

et al. 2008

2008 IEEE PhotonicsGlobal@Singapore

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Hydrogen component in SiN films synthesized using plasma enhanced chemical vapor deposition at low temperature (350 o C) using silane and nitrogen was studied by Fourier transform infrared spectrum. The effects of the SiH 4 /N 2 flow ratio and the radio frequency power on the hydrogen components of SiN films were investigated. Some sub-micron (400nm×700nm) waveguides were fabricated using corresponding optimal SiN films. The propagation loss is found to be as less as ~-2.12dB/cm at 1550nm. The whole waveguide fabrication of process was at low temperature. It is indicated that low hydrogen SiN waveguide preparation method is a promising method in photonics integrated circuits for new generation communications applications.

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Section: IIIsupporting

confidence: 93%

Low Hydrogen Component SiN Films by PECVD for Low Propagation Loss Waveguide

Mao

Tao

et al. 2008

2008 IEEE PhotonicsGlobal@Singapore

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“…USRN films with a thickness of 1.1 μm were deposited on a 50 μm thick SiO 2 substrate using inductively coupled chemical vapor deposition 6 at relatively low temperature of 250 °C. In the deposition, N 2 gas is used in replace of NH 3 for chemical reaction in forming Si 7 N 3 to minimize amount of H in the film because Si-H or N-H is a dominant absorption loss bonding at communication wavelength range of 1510–1565 nm 11–15 . The material composition was previously characterized using FTIR spectroscopy.…”

Section: Resultsmentioning

confidence: 99%

Optical nonlinearities in ultra-silicon-rich nitride characterized using z-scan measurements

Sohn

Choi

et al. 2019

Sci Rep

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The dispersive nonlinear refractive index of ultra-silicon-rich nitride, and its two-photon and three-photon absorption coefficients are measured in the wavelength range between 0.8 µm–1.6 µm, covering the O- to L – telecommunications bands. In the two-photon absorption range, the measured nonlinear coefficients are compared to theoretically calculated values with a simple parabolic band structure. Two-photon absorption is observed to exist only at wavelengths lower than 1.2 μm. The criterion for all-optical switching through the material is investigated and it is shown that ultra-silicon-rich nitride is a good material in the three-photon absorption region, which spans the entire O- to L- telecommunications bands.

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“…The process is exothermic with a favorable energy balance of 0.25 eV [23]. Also, it can be observed that the intensity of Si-N and Si-H stretching mode increases with increasing Si content of the film following the above reaction kinetics.…”

Section: Resultsmentioning

confidence: 99%

Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiN x :H films

et al. 2011

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In this study, a wide range of a-SiNx:H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH3 and SiH4. The silicon-rich a-SiNx:H films (SRSN) were sandwiched between a bottom thermal SiO2 and a top Si3N4 layer, and subsequently annealed within the temperature range of 500-1100°C in N2 to study the effect of annealing temperature on light-emitting and charge storage properties. A strong visible photoluminescence (PL) at room temperature has been observed for the as-deposited SRSN films as well as for films annealed up to 1100°C. The possible origins of the PL are briefly discussed. The authors have succeeded in the formation of amorphous Si quantum dots with an average size of about 3 to 3.6 nm by varying excess amount of Si and annealing temperature. Electrical properties have been investigated on Al/Si3N4/SRSN/SiO2/Si structures by capacitance-voltage and conductance-voltage analysis techniques. A significant memory window of 4.45 V was obtained at a low operating voltage of ± 8 V for the sample containing 25% excess silicon and annealed at 1000°C, indicating its utility in low-power memory devices.

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Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method

Cited by 26 publications

References 13 publications

Low Hydrogen Component SiN Films by PECVD for Low Propagation Loss Waveguide

Low Hydrogen Component SiN Films by PECVD for Low Propagation Loss Waveguide

Optical nonlinearities in ultra-silicon-rich nitride characterized using z-scan measurements

Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiN x :H films

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