Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS

Kobayashi, Yusuke; Ohse, Naoyuki; Morimoto, Takahiro; Kato, Masashi; Kojima, Takahito; Miyazato, Masaki; Takei, Masahiro; Kimura, Hiroshi; Harada, Shinsuke

doi:10.1109/iedm.2017.8268356

Cited by 57 publications

(43 citation statements)

References 6 publications

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“…Conventional SiC trench MOSFET (C-TMOS) with the shielding structure and carrier spreading layer (CSL) by using a high doping P+ layer and n layer under the trench oxide layer and channel, respectively, is one of the solutions to get a tradeoff between gate reliability and JFET resistance. The advantage of the C-TMOS over the planar one has been experimental demonstrated in [10]- [13]. Usually, when the C-TMOS operates in the power system, The associate editor coordinating the review of this manuscript and approving it for publication was Ramani Kannan.…”

Section: Introductionmentioning

confidence: 99%

Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

An¹,

Hu²

2019

IEEE Access

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A split-gate SiC trench MOSFET with a hetero-junction diode (HJD) is proposed and numerically analyzed in this paper. The proposed structure features the HJD to effectively suppress the turn-on of the parasitic body diode and reduce the depletion region in the JFET area. A P+ shielding layer surrounding the HJD and the gate oxide layer is used to alleviate the concentration of the electric field under the gate trench and improve the switching performance. As a result, not only the breakdown voltage is increased by 20.8% at the same level of the on-state resistance but also the miller charge and the switching loss of the proposed structure are reduced by 52% and 39.1%, respectively when compared with those of the conventional SiC trench MOSFET. INDEX TERMS Silicon carbide, heterojunction diode, high breakdown voltage, low on-state resistance, low switching loss.

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Section: Introductionmentioning

confidence: 99%

Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

An¹,

Hu²

2019

IEEE Access

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“…However, its large turn-on voltage would increase the losses during switching events. One solution lies on the integration of a Schottky barrier diode (SBD) with the MOSFET, which would be preferable for efficient converter topologies due to its much smaller turn-on voltage, lower resistance, and faster switching properties [23]. Nevertheless, the large parasitic inductance of an externally connected SBD would result in circuit ringing and system instability due to the external wiring.…”

Section: Introductionmentioning

confidence: 99%

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

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1 Abstract-We demonstrate for the first time the monolithic integration of vertical GaN MOSFETs with freewheeling Schottky barrier diodes (SBD), based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrates by metal organic chemical vapor deposition. The anode of the SBD is integrated in the source pad of the MOSFET and the cathode is directly connected to the MOSFET drain through the bottom n + -GaN layer, eliminating the need of any metal wire interconnection. This monolithic integration scheme offers reduced footprint, minimized parasitic components and simplified packaging. The integrated MOSFET-SBD showed enhancement-mode operation with a threshold voltage of 3.9 V, an on/off ratio of over 10 8 and a dramatic improvement in reverse conduction, without degradation in on-state performance from the integration of the SBD. The integrated GaN-on-Si vertical SBD exhibited excellent performance, with a specific on-resistance of 1.6 mΩ·cm 2 , a turn-on voltage of 0.76 V, an ideality factor of 1.5, along with a breakdown voltage of 254 V. These results reveal the promising potential of emerging GaN vertical devices for future power converters.

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“…Trench gate SiC MOSFET is attractive for the reduction of specific on-resistance characterized by a small cell pitch and high channel mobility on the trench sidewall [26,28]. Knee voltage of body diode in SiC MOSFET is relatively large due to its wide bandgap, which results in large conduction losses in the free wheeling operation.…”

Section: Device Structurementioning

confidence: 99%

“…1a) is the conventional double-trench gate SiC MOSFET [28], and Fig. 1b) is the developed trench gate SiC MOSFET with built-in SBD [24,26]. The latter is also named as Sbd-Wall-Integrated TrenCH MOSFET (SWITCH-MOS).…”

Section: Device Structurementioning

confidence: 99%

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An experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD

Fukunaga

Funaki

Harada

et al. 2019

IEICE Electron. Express

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Thermal characterization with static test method [1], which utilizes I − V characteristics of power semiconductor devices to estimate junction temperature (T J), has attracted attention for high density power conversion system design. However, the dynamic gate threshold voltage shift distorts T J estimation for SiC MOSFET. This paper evaluates time response of T J with junction voltage (V J) for the developed SiC MOSFET, which embeds Schottky barrier diode (SBD) in this structure. This sophisticated structure enables to get accurate time response of T J for SiC MOSFET, and hence to design dynamic thermal characteristics of power modules with SiC MOSFET.

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Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS

Cited by 57 publications

References 6 publications

Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

An experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD

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