2018
DOI: 10.1080/10584587.2018.1454222
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Blueshift of absorption edge and photoluminescence in Al doped ZnO thin films

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Cited by 22 publications
(7 citation statements)
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“…Moreover, all films shows a strong absorption in the ultraviolet region of 300-400 nm, which is attributed to the intrinsic absorption originated from the direct transition of electrons [26]. It can also be noted that the absorption edge of the films shifts to the short-wavelength direction after doped, which is in agreement with that reported in the literature [27,28]. This might be attributed to the reduction of surface roughness [29], which is accordant with the result of SEM observation.…”
Section: Optical Propertysupporting
confidence: 90%
“…Moreover, all films shows a strong absorption in the ultraviolet region of 300-400 nm, which is attributed to the intrinsic absorption originated from the direct transition of electrons [26]. It can also be noted that the absorption edge of the films shifts to the short-wavelength direction after doped, which is in agreement with that reported in the literature [27,28]. This might be attributed to the reduction of surface roughness [29], which is accordant with the result of SEM observation.…”
Section: Optical Propertysupporting
confidence: 90%
“…Generally, the blueshift in thin film materials may be associated with the Burstein−Moss effect. 53 The dependence of absorption coefficient and extinction coefficient on annealing temperature is plotted in Figures 7a,b, respectively, which show the dependence of absorption and extinction coefficients on wavelength λ of incident light. The observed variations in the extinction coefficient for the higher energies may be due to the band-to-band transition of charge carriers.…”
Section: Resultsmentioning
confidence: 99%
“…The study revealed that the absorption edge is shifted at higher values of incident light energies (i.e., a blueshift is observed). Generally, the blueshift in thin film materials may be associated with the Burstein–Moss effect . The dependence of absorption coefficient and extinction coefficient on annealing temperature is plotted in Figures a,b, respectively, which show the dependence of absorption and extinction coefficients on wavelength λ of incident light.…”
Section: Results and Discussionmentioning
confidence: 99%
“…The FD20 that has the lowest agglomeration has the lowest band gap value. Furthermore, another study reported that the band gap is also affected by the Burstein-Moss effect, where the Fermi level moves to the conduction band to increase the band gap [56]. The performance of Fe 3 O 4 /MWCNT/ZnO nanocomposites with diethylamine as an antibacterial agent was evaluated considering the diameter of the inhibition zones.…”
Section: Resultsmentioning
confidence: 99%