Using ultraviolet photoemission spectroscopy, we investigated the energy level alignment at the interfaces of typical anodes used in organic electronics, indium tin oxide ͑ITO͒ and poly͑3,4-ethylenedioxythiophene͒:poly͑styrenesulfonate͒ ͑PEDOT:PSS͒, with the oligomeric hole transport material N , N , NЈ, NЈ-tetrakis͑4-methoxyphenyl͒-benzidine ͑MeO-TPD͒, and studied the influence of electrical interface doping by the strong electron acceptor tetrafluoro tetracyanoquinodimethane ͑F 4 -TCNQ͒. The fundamentally different anode materials with work functions of 4.40 eV ͑ITO͒ and 4.85 eV ͑PEDOT:PSS͒ show different hole injection barriers, which also depend on the thickness of the F 4 -TCNQ interface dopant layer. PEDOT:PSS anodes exhibit a consistently lower hole injection barrier to MeO-TPD compared to ITO by 0.1 eV. We attribute this low hole injection barrier to additional charge transfer reactions at the PEDOT:PSS/MeO-TPD interface. In contrast, the deposition of the electron acceptor at the interface helps significantly to lower the hole injection barrier for ITO anodes.