2018
DOI: 10.1039/c8ra00021b
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Black Si-doped TiO2 nanotube photoanode for high-efficiency photoelectrochemical water splitting

Abstract: Black Si-doped TiO 2 (Ti-Si-O) nanotubes were fabricated through Zn metal reduction of the Ti-Si-O nanotubes on Ti-Si alloy in an argon atmosphere. The nanotubes were used as a photoanode for photoelectrochemical (PEC) water splitting. Both Si element and Ti 3+ /oxygen vacancies were introduced into the black Ti-Si-O nanotubes, which improved optical absorption and facilitated the separation of the photogenerated electron-hole pairs. The photoconversion efficiency could reach 1.22%, which was 7.18 times the ef… Show more

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Cited by 52 publications
(29 citation statements)
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“…The band gap remains at 1.80 eV for 2%, and increases to 1.86 eV for 3% dopant concentration. This decrease of the band gap is consistent with the observed increase of optical absorption of TNT upon Si doping [35,51,61]. The shift of the Fermi energy is also seen in the Si PDOS, Fig.…”
Section: Optimized Structure and Stability Of Tio 2 Nanotubessupporting
confidence: 88%
“…The band gap remains at 1.80 eV for 2%, and increases to 1.86 eV for 3% dopant concentration. This decrease of the band gap is consistent with the observed increase of optical absorption of TNT upon Si doping [35,51,61]. The shift of the Fermi energy is also seen in the Si PDOS, Fig.…”
Section: Optimized Structure and Stability Of Tio 2 Nanotubessupporting
confidence: 88%
“…The shift of flat-band potential towards cathodic direction for the pre-illuminated sample was observed. The similar effect was observed for, e.g., reduced TiO 2 nanotubes [43]. Analysis of the Mott-Schottky plot allows the donor density to be determined.…”
Section: Photoelectrochemical Properties and Photointercalated Materisupporting
confidence: 62%
“…Peaks at around 531, 532.4, and 533.1 eV are attributed to the Ge−O, Si−O and O−H, respectively. For GeH, Si 6 H 3 (OH) 3 and all gersiloxenes, a same fitted peak located at around 531.7 eV, corresponded to the adsorbed O atoms in the vicinity of oxygen vacancies (Oads), is supposed to be associated with the surface oxygen vacancies 52,53 , which would significantly influence their optical properties.…”
Section: Resultsmentioning
confidence: 98%