Black Phosphorus–Zinc Oxide Nanomaterial Heterojunction for p–n Diode and Junction Field-Effect Transistor

Jeon, Pyo Jin; Lee, Young Tack; Lim, June Yeong; Kim, Jin Sung; Hwang, Do Kyung; Im, Seongil

doi:10.1021/acs.nanolett.5b04664

Cited by 148 publications

(143 citation statements)

References 42 publications

(165 reference statements)

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“…Indeed, several research groups have demonstrated hybrid phototransistors based on 0D-2D heterojunctions of PbS QDs and graphene, MoS 2 , or WSe 2 . [30] In this study, we present a mixed-dimensional 1D ZnO NW (n-type)-2D WSe 2 nanosheet (p-type) vdW heterojunction device for spectral photodetection as well as imaging process. [29] However, although 1D ZnO metal oxide semiconductor NWs are also a promising candidate for mixed-dimensional vdW heterostructures, 1D ZnO NW-2D vdW material heterojunctions have rarely been reported.…”

Section: Introductionmentioning

confidence: 99%

Mixed‐Dimensional 1D ZnO–2D WSe₂ van der Waals Heterojunction Device for Photosensors

Lee

Jeon

Han

et al. 2017

Adv Funct Materials

Self Cite

101

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2D layered van der Waals (vdW) atomic crystals are an emerging class of new materials that are receiving increasing attention owing to their unique properties. In particular, the dangling-bond-free surface of 2D materials enables integration of differently dimensioned materials into mixed-dimensional vdW heterostructures. Such mixed-dimensional heterostructures herald new opportunities for conducting fundamental nanoscience studies and developing nanoscale electronic/optoelectronic applications. This study presents a 1D ZnO nanowire (n-type)-2D WSe 2 nanosheet (p-type) vdW heterojunction diode for photodetection and imaging process. After amorphous fluoropolymer passivation, the ZnO-WSe 2 diode shows superior performance with a much-enhanced rectification (ON/OFF) ratio of over 10 6 and an ideality factor of 3.4-3.6 due to the carbon-fluorine (CF) dipole effect. This heterojunction device exhibits spectral photoresponses from ultraviolet (400 nm) to near infrared (950 nm). Furthermore, a prototype visible imager is demonstrated using the ZnO-WSe 2 heterojunction diode as an imaging pixel. To the best of our knowledge, this is the first demonstration of an optoelectronic device based on a 1D-2D hybrid vdW heterojunction. This approach using a 1D ZnO-2D WSe 2 heterojunction paves the way for the further development of electronic/optoelectronic applications using mixed-dimensional vdW heterostructures.transition metal dichalcogenides of MoS 2 , MoTe 2 , and WSe 2 , post-transition metal dichalcogenides of SnS 2 and SnSe 2 , and black phosphorus (BP), have been synthesized; furthermore, their prototype electronic/optoelectronic applications have been demonstrated for field-effect transistors, [3][4][5][6][7][8][9] logic circuits, [8,[10][11][12][13] light-emitting diodes, [14,15] phototransistors, [16][17][18][19][20] and photodiodes. [21][22][23][24] While there has been great progress in the field of 2D vdW materials, challenges have yet to be resolved for realizing their full potential:(1) implementation of high-speed operation to replace silicon or III-V compound semiconductors, (2) control of carrier type and concentration by doping, and (3) development of high quality all 2D vdW heterostructures over large areas.Recently, Jariwala et al. introduced mixed-dimensional vdW heterostructures, which are a very promising strategy for overcoming the limitations of electronics based on 2D vdW materials. [25] Of the many unique physical properties of 2D vdW materials, the nature of danglingbond-free surfaces enables integration of differently dimensioned materials, such as 0D quantum dot (QD), 1D nanowire (NW), or 3D film or bulk, into mixeddimensional vdW heterostructures. Such mixed-dimensional heterostructures herald new opportunities for conducting fundamental nanoscience studies and developing nanoscale

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Section: Introductionmentioning

confidence: 99%

Mixed‐Dimensional 1D ZnO–2D WSe₂ van der Waals Heterojunction Device for Photosensors

Lee

Jeon

Han

et al. 2017

Adv Funct Materials

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101

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“…[5][6][7][8][9] Since the first isolation of black phosphorus and demonstration of a field effect device, numerous reports investigating the synthesis and optoelectronic properties of this material have emerged, appropriately summarized in recent reviews. 5,6,[10][11][12] Likewise a number of reports have also appeared on the applications of black phosphorus in fast photodetectors 13 , polarization sensitive detectors, 14 waveguide integrated devices 15 , multispectral photodetectors 16 , visible to near-infrared absorbers 17 and emitters, [18][19][20][21] heterojunction 22 and split gate p-n homojunction photovoltaics 23 , gatetunable van der Waals heterojunctions for digital logic circuits 24,25 and gigahertz frequency transistors in analog electronics 26 . A majority of the studies on both the fundamental optical properties of black phosphorus and applications in optoelectronic devices have explored only the visible frequency range [27][28][29][30] .…”

mentioning

confidence: 99%

Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

Whitney¹,

Sherrott²,

Jariwala³

et al. 2016

Nano Lett.

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Abstract:We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. We interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and a quantum confined Franz-Keldysh (QCFK) effect, phenomena which have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.

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“…[12] Recent studies of 2D materials [13] have revealed a variety of 2D semiconductors (2DSCs) with excellent electronic properties [14][15][16][17] and ultrathin body thickness. However, despite several studies on 2DSCs based JFETs reported to date, [23][24][25][26] the SS achieved in these devices remain > 100 mV dec −1 , far from the ideal value of 60 mV dec −1 . [11] Additionally, the dangling bond free van der Waals (vdW) interface formed by 2DSCs could feature a trapping free interface to promise nearly ideal junction characteristics.…”

Section: Doi: 101002/adma201902962mentioning

confidence: 90%

SnSe/MoS₂ van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope

Guo

Wang

et al. 2019

Advanced Materials

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The minimization of the subthreshold swing (SS) in transistors is essential for low‐voltage operation and lower power consumption, both critical for mobile devices and internet of things (IoT) devices. The conventional metal‐oxide‐semiconductor field‐effect transistor requires sophisticated dielectric engineering to achieve nearly ideal SS (60 mV dec−1 at room temperature). However, another type of transistor, the junction field‐effect transistor (JFET) is free of dielectric layer and can reach the theoretical SS limit without complicated dielectric engineering. The construction of a 2D SnSe/MoS2 van der Waals (vdW) heterostructure‐based JFET with nearly ideal SS is reported. It is shown that the SnSe/MoS2 vdW heterostructure exhibits excellent p–n diode rectifying characteristics with low saturate current. Using the SnSe as the gate and MoS2 as the channel, the SnSe/MoS2 vdW heterostructure exhibit well‐behavioured n‐channel JFET characteristics with a small pinch‐off voltage VP of −0.25 V, nearly ideal subthreshold swing SS of 60.3 mV dec−1 and high ON/OFF ratio over 106, demonstrating excellent electronic performance especially in the subthreshold regime.

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Black Phosphorus–Zinc Oxide Nanomaterial Heterojunction for p–n Diode and Junction Field-Effect Transistor

Cited by 148 publications

References 42 publications

Mixed‐Dimensional 1D ZnO–2D WSe₂ van der Waals Heterojunction Device for Photosensors

Mixed‐Dimensional 1D ZnO–2D WSe₂ van der Waals Heterojunction Device for Photosensors

Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

SnSe/MoS₂ van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope

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Black Phosphorus–Zinc Oxide Nanomaterial Heterojunction for p–n Diode and Junction Field-Effect Transistor

Cited by 148 publications

References 42 publications

Mixed‐Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors

Mixed‐Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors

Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

SnSe/MoS2 van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope

Contact Info

Product

Resources

About

Mixed‐Dimensional 1D ZnO–2D WSe₂ van der Waals Heterojunction Device for Photosensors

Mixed‐Dimensional 1D ZnO–2D WSe₂ van der Waals Heterojunction Device for Photosensors

SnSe/MoS₂ van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope