Black phosphorus quantum dot-based field-effect transistors with ambipolar characteristics

Seo, Soonjoo; Park, Byoungnam; Kim, Young‐Jun; Lee, Hyun Uk; Kim, Hye‐Ran; Lee, Seung Youb; Kim, Yooseok; Won, Jonghan; Kim, Youn Jung; Lee, Jun Young

doi:10.1016/j.apsusc.2018.04.158

Cited by 16 publications

(4 citation statements)

References 41 publications

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“…Two-dimensional (2D) transition-metal dichalcogenides have attracted great attention owing to their unique layered structure, strong spin–orbit coupling, and electrical and optical properties. , This makes them interesting for applications in field-effect transistors, − flexible electronics, high-performance electronics, photonics, , solar cells, , photodetectors, − light-emitting diodes, − and chemical sensors. , Progress in discovering 2D materials is also fostering the creation of novel hybrid structures. − …”

Section: Introductionmentioning

confidence: 99%

Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS₂ by Ag Nanoprisms and Nanoparticles: Shape and Size Effects

et al. 2021

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The metal nanoparticle size and shape impact the plasmonic enhancement of Raman and photoluminescence (PL) spectra of monolayer and few-layer MoS2 decorated with them. The plasmonic enhancement is investigated for Ag nanotriangles (NTs or nanoprisms) of different sizes in comparison to Ag nanospheres (NSs) at room temperature. After the decoration with Ag NTs, the intensity of both Raman modes of MoS2 increases up to 6.8 times. The μ-PL spectra of bare MoS2 show the presence of the A and B exciton bands as well as of a weak trion component. After covering the flakes with 50 nm Ag NTs, the highest integrated PL enhancement factors are 2.9 and 2.1 under 532 and 405 nm excitations, respectively. The revealed shape effect is that Ag NTs provide much stronger Raman and exciton emission enhancement than Ag NSs, which is due to the generation of plasmonic hot spots near the sharp edges and tips of NTs. Another mechanism of enhancement is the plasmonic coupling between the neighboring Ag NTs that causes the generation of hot spots in the gap between NTs. The revealed size effect is a decrease of Raman and PL enhancement with an increase in size of Ag NTs or NSs, which is due to an increase in radiative damping of plasmon oscillation occurring with an increase in nanoparticle size. The important feature is a strong enhancement of the A– trion component after decorating MoS2 with Ag nanoparticles. The phenomenon may be explained by the surface-plasmon-mediated generation of hot electrons in Ag nanostructures, which then inject to MoS2 flakes. This work gives new fundamental insights into the physical mechanisms of light–matter coupling in hybrid two-dimensional (2D) semiconductor/plasmonic nanoparticle structures, which are highly promising for next-generation optoelectronic and nanophotonic devices.

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Section: Introductionmentioning

confidence: 99%

Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS₂ by Ag Nanoprisms and Nanoparticles: Shape and Size Effects

et al. 2021

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“…Owing to excellent properties including the optical property, thermal property, mechanical property, biocompatibility, etc. [108], apart from the electrical property, BP has been broadly applied to FETs [109,110,111], batteries [112,113], photodetectors [114], gas sensors [115], protease detection, and inhibitor screening [116].…”

Section: Doping With Two-dimensional Nanomaterialsmentioning

confidence: 99%

Approaches to Enhancing Gas Sensing Properties: A Review

Yuan

Meng

et al. 2019

Sensors

111

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A gas nanosensor is an instrument that converts the information of an unknown gas (species, concentration, etc.) into other signals (for example, an electrical signal) according to certain principles, combining detection principles, material science, and processing technology. As an effective application for detecting a large number of dangerous gases, gas nanosensors have attracted extensive interest. However, their development and application are restricted because of issues such as a low response, poor selectivity, and high operation temperature, etc. To tackle these issues, various measures have been studied and will be introduced in this review, mainly including controlling the nanostructure, doping with 2D nanomaterials, decorating with noble metal nanoparticles, and forming the heterojunction. In every section, recent advances and typical research, as well mechanisms, will also be demonstrated.

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“…Zhu et al introduced an ambipolar phosphorus amplifier with voltage gains of ~8.7, achieved at symmetric DC bias of V GS = −1.6 V and V DS = −2.1 V with source or gate served as input terminal and drain served as output terminal [68]. Although charge trapping sites exist on the surface, black phosphorus FETs are still able to demonstrate intrinsic ambipolar characteristics [76, 77]. Similarly, black arsenene FET demonstrated ambipolar charge transport behavior, which reveals higher or comparable electronic [42], thermal, and electric transport anisotropies between the armchair and zigzag directions than any other known 2D crystals.…”

Section: Integration and Characterization Of 2d Pnictogen Fetsmentioning

confidence: 99%

Two-Dimensional Pnictogen for Field-Effect Transistors

et al. 2019

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Two-dimensional (2D) layered materials hold great promise for various future electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D pnictogen, group-VA atomic sheet (including phosphorene, arsenene, antimonene, and bismuthene) is believed to be a competitive candidate for next-generation logic devices. This is due to their intriguing physical and chemical properties, such as tunable midrange bandgap and controllable stability. Since the first black phosphorus field-effect transistor (FET) demo in 2014, there has been abundant exciting research advancement on the fundamental properties, preparation methods, and related electronic applications of 2D pnictogen. Herein, we review the recent progress in both material and device aspects of 2D pnictogen FETs. This includes a brief survey on the crystal structure, electronic properties and synthesis, or growth experiments. With more device orientation, this review emphasizes experimental fabrication, performance enhancing approaches, and configuration engineering of 2D pnictogen FETs. At the end, this review outlines current challenges and prospects for 2D pnictogen FETs as a potential platform for novel nanoelectronics.

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Black phosphorus quantum dot-based field-effect transistors with ambipolar characteristics

Cited by 16 publications

References 41 publications

Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS₂ by Ag Nanoprisms and Nanoparticles: Shape and Size Effects

Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS₂ by Ag Nanoprisms and Nanoparticles: Shape and Size Effects

Approaches to Enhancing Gas Sensing Properties: A Review

Two-Dimensional Pnictogen for Field-Effect Transistors

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Black phosphorus quantum dot-based field-effect transistors with ambipolar characteristics

Cited by 16 publications

References 41 publications

Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and Size Effects

Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and Size Effects

Approaches to Enhancing Gas Sensing Properties: A Review

Two-Dimensional Pnictogen for Field-Effect Transistors

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Product

Resources

About

Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS₂ by Ag Nanoprisms and Nanoparticles: Shape and Size Effects

Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS₂ by Ag Nanoprisms and Nanoparticles: Shape and Size Effects