Black‐Phosphorus‐Based Orientation‐Induced Diodes

Wei, Xin; Li, Xiao‐Kuan; He, Xin-Ling; Su, Bao‐Wang; Jiang, Xiaoqiang; Huang, Keqiang; Zhou, Xiang-Feng; Liu, Zhibo; Tian, Jianguo

doi:10.1002/adma.201704653

Cited by 56 publications

(59 citation statements)

References 38 publications

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“…† Next, the MoS 2 ake was used to bridge the two BP pieces using a dry-transfer technique, which was reported in our previous studies. [45][46][47] Subsequently, the hBN ake was transferred onto the le BP ake in the same way as the top gate dielectric. Finally, 50 nm thick Au electrodes were patterned and deposited using photolithography and magnetron sputtering, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…In this paper, we present a PNP symmetric bipolar junction transistor (SBJT) fabricated with p-type black phosphorus (BP) and n-type MoS 2 with femtosecond laser processing (FSLP). [43][44][45] Compared with other intricate growth procedures and tedious transfer processes, we can produce devices with a single stacking step using FSLP. First, this SBJT exhibits a p-n junction rectication ratio of 10 3 and photoresponsivity of 2.2 A W À1 .…”

Section: Introductionmentioning

confidence: 99%

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A gate-tunable symmetric bipolar junction transistor fabricatedviafemtosecond laser processing

Yao

Zhang

et al. 2020

Nanoscale Adv.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A gate-tunable symmetric bipolar junction transistor fabricatedviafemtosecond laser processing

Yao

Zhang

et al. 2020

Nanoscale Adv.

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“…Therefore, when the carrier passes through the black phosphorus from the vertical direction, there will be an obvious tunneling phenomenon compared with the horizontal flow. This results in a stronger vertical response than horizontal [17]. Moreover, when the direct band gap of black phosphorus is 0.3 eV, the photoresponsivity is about 4.8 mA W −1 [18].…”

Section: Introductionmentioning

confidence: 99%

“…There are many two-dimensional materials, such as Bp/MoS 2 , Bp/Bp, and Bp/Gr, and the applications of such doped materials in the fields of electronics and optoelectronics have been widely studied [17,[19][20][21][22][23][24]. Most of the methods for enhancing photo-electronics utilize the interaction between two-dimensional materials and photons.…”

Section: Introductionmentioning

confidence: 99%

Tunneling devices based on graphene/black phosphorus van der Waals heterostructures

Jiang

Chen

et al. 2020

Mater. Res. Express

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Vertically stacked devices of two-dimensional layered materials (2DLMs) based on van der Waals heterostructures (vdWHs) have recently attracted considerable attention due to their good properties. A tunneling structure is presented in this paper that, unlike other tunneling structures, has no specific insulating two-dimensional materials, such as boron nitride. The tunneling structure is comprised of graphene and black phosphorus. Black phosphorus is chemically active, and can be easily oxidized in the air to form an insulating layer. A tunneling device was produced based on this characteristic of black phosphorus. The insulation layer was an oxide layer formed by the oxidation of black phosphorus. The structure takes advantage of the easy oxidation ability of black phosphorus. The presence of a black phosphorus oxide layer was determined by XPS analysis. The tunneling characteristics of the overlay structure were determined by measuring the current-voltage (I d -V) curve of the device. Simulation studies showed that the oxidation layer was responsible for the tunneling effect. Compared with other black phosphorus devices, the photoelectric properties of the proposed device were greatly improved.

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“…Considering the anisotropy of the materials during stacking, a heterojunction with excellent properties may be obtained. A series of works in anisotropic materials has been explored, including photothermal detection, determination of crystalline orientation, and diodes . These results have laid the foundation for using the anisotropy of materials to investigate functional devices.…”

Section: Introductionmentioning

confidence: 99%

Polarization‐Dependent Photocurrent of Black Phosphorus/Rhenium Disulfide Heterojunctions

Gao

et al. 2018

Adv Materials Inter

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as diodes, [18,19] photodetectors, [20] and memory devices. [21,22] However, the stacking of many heterojunctions simply focuses on the stacking of different materials and seldom mentions anisotropy of the material itself. Considering the anisotropy of the materials during stacking, a heterojunction with excellent properties may be obtained. A series of works in anisotropic materials has been explored, including photothermal detection, determination of crystalline orientation, and diodes. [23][24][25][26] These results have laid the foundation for using the anisotropy of materials to investigate functional devices. BP is a p-type semiconducting 2D material that can be used as a channel material in field-effect transistors (FETs) with hole mobility up to ≈1000 cm 2 V −1 s −1 . [2] The small and direct bandgap makes BP as an ideal material for broadband photodetection. Further, the BP FETs show a fast photoresponse to excitation wavelengths from the visible region to near-infrared region, indicating BP as a promising material for high-speed broadband photodetector. [27] What is more, BP exhibits an anisotropic optical response due to the existence of strong in-plane anisotropy, [28,29] and thus detection of light polarization can be achieved. ReS 2 is an n-type semiconductor, and also have anisotropic carrier transport and optical property. [30] Thus, it is expected to obtain a stronger polarized photoresponse through the formation of a p-n junction with BP and ReS 2 .In this paper, we designed heterojunctions with the b-axis of ReS 2 parallel to the crystal orientation of BP, due to the stronger optical absorption of the b-axis of ReS 2 . [31] The p-n junction with BP and ReS 2 shows a better polarization-dependent photoresponse than individual BP or ReS 2 . Here, we investigated variations in photocurrent with linear polarized light for these orientation-induced heterojunctions. Two types of heterojunctions were fabricated with the direction of armchair (AC) and zigzag (ZZ) parallel to the b-axis of ReS 2 , and the maximum photocurrent ratio of two polarization directions with parallel to AC and ZZ of BP can reach 31 at gate voltage of 0 V with V ds = −1 V. Based on the strong polarization-dependent characteristic of BP/ReS 2 heterojunction with AC direction parallel to the b-axis of ReS 2 , a photodetector is provided to apply in polarization optoelectronic detection.Van der Waals (vdW) heterojunctions of 2D layered materials possess excellent interface quality without the constraint of lattice mismatch, which enables the application of nanomaterials in electronic and optoelectronic devices. The anisotropy of 2D materials however, also plays an important role in the stacking process of vdW heterojunction. Black phosphorus (BP) and rhenium disulfide (ReS 2 ), as two strong anisotropic 2D materials, have intrinsic in-plane anisotropic properties that can be used in polarization-sensitive photoelectric devices. Herein, two types of BP/ReS 2 heterojunctions are stacked by controlling their crystal orientation, with ...

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Black‐Phosphorus‐Based Orientation‐Induced Diodes

Cited by 56 publications

References 38 publications

A gate-tunable symmetric bipolar junction transistor fabricatedviafemtosecond laser processing

A gate-tunable symmetric bipolar junction transistor fabricatedviafemtosecond laser processing

Tunneling devices based on graphene/black phosphorus van der Waals heterostructures

Polarization‐Dependent Photocurrent of Black Phosphorus/Rhenium Disulfide Heterojunctions

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