2019
DOI: 10.1039/c9ta07353a
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BiVO4 optimized to nano-worm morphology for enhanced activity towards photoelectrochemical water splitting

Abstract: Unique worm-like BiVO4 nanoparticles prepared through hydrothermal treatment of scheelite tetragonal BiVO4 show enhanced performance towards photo-electrochemical water splitting.

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Cited by 66 publications
(38 citation statements)
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“…Following this idea, Dey et al proposed the growth mechanism of definite BiVO 4 nano worm-like (BVNW) morphology. [51] The HRTEM analysis of the BVNW nanostructures forming a loop-like orientation with an interplanar distance of 0.29 nm confirmed the (004) lattice fringes of BiVO 4 . Initial stage low PEC was attributed to the production of defect centers during BVNW growth that functions as a trap for charge carriers.…”
Section: Morphology Engineeringmentioning
confidence: 62%
See 1 more Smart Citation
“…Following this idea, Dey et al proposed the growth mechanism of definite BiVO 4 nano worm-like (BVNW) morphology. [51] The HRTEM analysis of the BVNW nanostructures forming a loop-like orientation with an interplanar distance of 0.29 nm confirmed the (004) lattice fringes of BiVO 4 . Initial stage low PEC was attributed to the production of defect centers during BVNW growth that functions as a trap for charge carriers.…”
Section: Morphology Engineeringmentioning
confidence: 62%
“…Morphology engineering is therefore considered as one of the effective approaches to maximize the light absorption and improve the charge carrier dynamics in BiVO 4 . To date, morphological engineering of the BiVO 4 such as nanoflakes, [50] nanoworm, [51] epitaxial growth, [24b] nanoporous, [52] twin structure, [45] etc. have been well demonstrated.…”
Section: Different Surface Bulk and Interface Engineering Strategiesmentioning
confidence: 99%
“…The capacitance and resistance can be validated and studied using M–S analysis for the interfacial properties across the junction. M–S plots were processed utilizing the following equations: 25 , 55 where ε o is the dielectric constant of the semiconductor, ε o is the permittivity of free space, A is the area of the thin film, e is the charge, and k is Boltzmann’s constant. V FB indicates the potential required to diffuse the photogenerated charge carriers in the semiconductor.…”
Section: Resultsmentioning
confidence: 99%
“…7d for all the photoelectrodes. The ABPE was calculated from the LSV plot (i.e., the J-V curves) using the equation given below: 13…”
Section: Mechanism Of Charge Transfermentioning
confidence: 99%
“…8 There are, however, some other factors that contribute to its limited application for solar water splitting, such as its low electron mobility, average charge-carrier separation efficiency, and a high kinetic barrier for the transfer of charge carriers across the aqueous interface. 9,10 Different strategies have been adopted to overcome these limitations, such as the substitution of certain ions, 11 the design of heterostructures, 12 optimization of the morphology, 13 crystal-facet control, 14 the deposition of cocatalysts, 15 etc. There have been some reports where BiVO 4 has been combined with appropriate materials to form composites, such as BiVO 4 /Fe 2 O 3 , 16 BiVO 4 /MOOH (M = Ni, Fe), 17 FTO/BiVO 4 / Ag 2 S, 18 the NiFeV/B-BiVO 4 photoanode, 19 the WO 3 /BiVO 4 coreshell heterostructure, 20 Co-Pi/BiVO 4 , 21 etc., to enhance the photoelectrochemical performance.…”
Section: Introductionmentioning
confidence: 99%