Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications

Lai, Yi-Sheng; Tu, Chia Hsun; Kwong, D. L.; Chen, Jen‐Sue

doi:10.1063/1.2051801

Cited by 186 publications

(154 citation statements)

References 12 publications

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“…Reported switching times vary by orders of magnitude with values ranging from nanoseconds to milliseconds. [23][24][25][26][27][28][29] As seen in Fig. 6, once programmed into the on-state, even low voltages trigger switching in low current capacity filaments, but still show a delay before the maximum current is achieved.…”

Section: B Transient Response In the On-statementioning

confidence: 99%

The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

Rocha

Leeuw

Meskers

et al. 2013

Journal of Applied Physics

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Articles you may be interested in Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon J. Appl. Phys. 118, 205503 (2015); 10.1063/1.4936349Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism Appl. Phys. Lett. 105, 193502 (2014) The dynamic response of a non-volatile, bistable resistive memory fabricated in the form of Al 2 O 3 /polymer diodes has been probed in both the off-and on-state using triangular and step voltage profiles. The results provide insight into the wide spread in switching times reported in the literature and explain an apparently anomalous behaviour of the on-state, namely the disappearance of the negative differential resistance region at high voltage scan rates which is commonly attributed to a "dead time" phenomenon. The off-state response follows closely the predictions based on a classical, two-layer capacitor description of the device. As voltage scan rates increase, the model predicts that the fraction of the applied voltage, V ox , appearing across the oxide decreases. Device responses to step voltages in both the off-and on-state show that switching events are characterized by a delay time. Coupling such delays to the lower values of V ox attained during fast scan rates, the anomalous observation in the on-state that, device currents decrease with increasing voltage scan rate, is readily explained. Assuming that a critical current is required to turn off a conducting channel in the oxide, a tentative model is suggested to explain the shift in the onset of negative differential resistance to lower voltages as the voltage scan rate increases. The findings also suggest that the fundamental limitations on the speed of operation of a bilayer resistive memory are the time-and voltage-dependences of the switch-on mechanism and not the switch-off process. V C 2013 American Institute of Physics. [http://dx

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Section: B Transient Response In the On-statementioning

confidence: 99%

The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

Rocha

Leeuw

Meskers

et al. 2013

Journal of Applied Physics

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“…Nowadays the researches of memristor have attracted widely interest of researchers in physics, materials, electronics, informations and other fields because of their potential applications in chaotic secure communication, artificial neural networks, image processing, intelligent computers, the new memories, and electronic measuring systems. And the researchs on the memristor are mainly in several ways, such as the physical mechanics and mathematical models of memristor [4,5,6,7], the manufacturing methods and new manufacturing processes of memristor [2,5,8,9], the characteristic analyses and the kinetic behaviors of memristors [10,11], and so on.…”

Section: Introductionmentioning

confidence: 99%

Characteristics for series and parallel circuits of flux-controlled memristors

Huang

Kang

2017

IEICE Electron. Express

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With the closed principle of flux-controlled memristors, the parallel, series, and array circuits of flux-controlled memristors are made discussed. The parameters for equivalent flux-controlled memristors of these memristor systems are deduced theoretically. The mathematical relationships between the parameters of equivalent flux-controlled memristors and those of corresponding component memristors are attained. The results are interesting for the application of serie, parallel, and array circuits of flux-controlled memristors.

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“…These devices have an associated memory effect for data-storage applications especially the bistable architectures (e.g. [21,26,38,[40][41][42][43][44][45][46][47]). The bistable and multiple-layer stacking structures have therefore emerged as a viable technology for flexible, ultrafast, and ultrahighdensity memory devices in the field of organic electronics [48].…”

Section: Introductionmentioning

confidence: 99%

Effect of Switching on Metal-Organic Interface Adhesion Relevant to Organic Electronic Devices

Babatope¹,

Akogwu²,

Adewoye³

et al. 2013

AMPC

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Considerable efforts are currently being devoted to investigation of metal-organic, organic-organic and organic-inorganic interfaces relevant to organic electronic devices such as organic light emitting diode (OLEDs), organic photovoltaic solar cells, organic field effect transistors (OFETs), organic spintronic devices and organic-based Write Once Read Many times (WORM) memory devices on both rigid and flexible substrates in laboratories around the world. The multilayer structure of these devices makes interfaces between dissimilar materials in contact and plays a prominent role in charge transport and injection efficiency which inevitably affect device performance. This paper presents results of an initial study on how switching between voltage thresholds and chemical surface treatment affects adhesion properties of a metal-organic (Au-PEDOT:PSS) contact interface in a WORM device. Contact and Tapping-mode Atomic Force Microscopy (AFM) gave surface topography, phase imaging and interface adhesion properties in addition to SEM/EDX imaging which showed that surface treatment, switching and surface roughness all appeared to be key factors in increasing interface adhesion with implications for increased device performance.

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Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications

Cited by 186 publications

References 12 publications

The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

Characteristics for series and parallel circuits of flux-controlled memristors

Effect of Switching on Metal-Organic Interface Adhesion Relevant to Organic Electronic Devices

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