Characteristics for series and parallel circuits of flux-controlled memristors

He, Jinghan; Huang, Chi Bao; Kang, Shuai

doi:10.1587/elex.14.20170230

Cited by 3 publications

(1 citation statement)

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“…It is demonstrated that the memristor series‐parallel circuits allow for high data density, better performance, and better dynamic characteristics. In 2017, He and Huang used a third‐order smooth flux‐controlled memristor model to theoretically analyse the equivalent resistance of series‐parallel and reverse series‐parallel circuits, and conducted numerical simulations [17]. In 2018, Zheng studied the memristor series‐parallel circuit with a coupling effect and applied it to the classic Chua's circuit to generate a chaotic attractor [18].…”

Section: Introductionmentioning

confidence: 99%

Spice modelling of a tri‐state memristor and analysis of its series and parallel characteristics

Wang

Zhang

et al. 2021

IET Circuits, Devices & Syst

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Memristors are passive non-linear circuit components with memory characteristics, and have been recognized as the fourth basic circuit component, along with resistors, capacitors, and inductors. It has been nearly half a century since the conceptualisation of the memristor, and related research has mainly focussed on the two aspects of binary and continuous memristors. However, compared with these two types of memristors, tri-state and multi-state memristors have greater data density per device, with rich dynamics and great potential in logic and chaotic circuit applications. Moreover, previous studies show that the series-parallel connection of memristor generates more diverse circuit behaviours and increased capacity over a single memristor. However, most of this research is based on mathematical analysis, and lack behavioural circuit simulations or experimental validation. Here, the tri-state memristor is proposed and the mathematic and equivalent Spice models of the tri-state memristor is shown. Furthermore, the circuit characteristics are studied with a complete characterisation of its series-parallel behaviours of the tri-state memristor. Simulations are performed with LTSpice, and the results verify the theoretical analysis, which provides a strong experimental basis for the study of combinational memristive circuits.This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.

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Section: Introductionmentioning

confidence: 99%