Bistable gated bipolar device

Duane, Russell; Mathewson, A.; Concannon, A.

doi:10.1109/led.2003.817374

Cited by 20 publications

(14 citation statements)

References 13 publications

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“…Recently, NDR device using both enhancement and depletion mode of MOSFETs, has been reported with high PVCR of 10 7 at 1.6 V [8]. These previous reports based on MOSFET operation and structure with terminal reconfigurations demonstrated PVCR at relatively high operation voltage over 1.5 or 2.0 V [4][5][6][7][8]. For higher PVCR over 10 4 at lower operation voltage below 1 V, simple pn diode combined with silicon (Si) nanowire (NW) structure has been presented with ultrahigh PVCR of 10 8 at low voltage of 1.0 V in our previous work [9].…”

Section: Introductionmentioning

confidence: 97%

“…Enhanced surface generation in SiGe-based gated diode is exploited for PVCR of 300 around at 3 V [4,5]. Other works show the PVCR of 1000 with breakdown mechanism of gated bipolar device in MOSFET structure [6,7]. Recently, NDR device using both enhancement and depletion mode of MOSFETs, has been reported with high PVCR of 10 7 at 1.6 V [8].…”

Section: Introductionmentioning

confidence: 99%

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Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

Shin¹,

Kang²,

Kim³

2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-We propose a novel negative differential resistance (NDR) device with ultra-high peak-tovalley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over 10 4 at low operation voltage of 0.5 V in a single peak and valley current.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

Shin¹,

Kang²,

Kim³

2013

JSTS:Journal of Semiconductor Technology and Science

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“…(ii) The III–V semiconductors that produce high PVCR values (between 5 and 144) are not compatible with the current CMOS technology. , The low PVCR values in two-terminal NDR tunnel diodes have been attributed to the band-tail tunneling, which originates from the strong doping and doping fluctuations and has been studied in detail by many authors using different approaches. − Many research contributions have been reported to improve the PVCR value over 100 based on a CMOS-compatible process. Extremely high, by 2–3 orders of magnitude, PVCR values have been obtained in NDR circuits based on a combination of a Si-based CMOS and a SiGe heterojunction bipolar transistor. − Despite their high PVCR values, such devices possess complex circuit topology with at least three (four) transistors for a Λ-type (N-type) NDR effect (Figure ), which makes them unsuitable for memory applications …”

Section: Introductionmentioning

confidence: 99%

Theoretical Prediction of Semiconductor-Free Negative Differential Resistance Tunnel Diodes with High Peak-to-Valley Current Ratios Based on Two-Dimensional Cold Metals

Şaşıoğlu

Mertig

2023

ACS Appl. Nano Mater.

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The negative differential resistance (NDR) tunnel diodes are promising alternative devices for beyond-CMOS (complementary metal oxide semiconductor) computing because they offer several potential applications when integrated with transistors. We propose a semiconductor-free NDR tunnel diode concept that exhibits an ultrahigh peak-to-valley current ratio (PVCR) value. Our proposed NDR diode consists of two cold metal electrodes separated by a thin insulating tunnel barrier. The NDR effect stems from the unique electronic band structure of the cold metal electrodes; i.e., the width of the isolated metallic bands around the Fermi level as well as the energy gaps separating higher- and lower-lying bands determine the current–voltage (I–V) characteristics and the PVCR value of the tunnel diode. By proper choice of the cold metal electrode materials, either a conventional N-type or Λ-type NDR effect can be obtained. Two-dimensional (2D) nanomaterials offer a unique platform for the realization of proposed NDR tunnel diodes. To demonstrate the proof of concept, we employ the nonequilibrium Green function method combined with density functional theory to calculate the I–V characteristic of the lateral (AlI2/MgI2/AlI2) and vertical (NbS2/h-BN/NbS2) heterojunction tunnel diodes based on 2D cold metals. For the lateral tunnel diode, we obtain a Λ-type NDR effect with an ultrahigh PVCR value of 1016 at room temperature, while the vertical tunnel diode exhibits a conventional N-type NDR effect with a smaller PVCR value of about 104. The proposed concept provides a semiconductor-free solution for NDR devices to achieve the desired I–V characteristics with ultrahigh PVCR values for memory and logic applications.

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“…For example, the enhanced surface generation method was exploited in SiGe-based gated diode and the PVCR was improved to 300 at 3 V [8], [9]. The breakdown mechanism of gated bipolar device in MOSFET structure was employed to cause PVCR increased to 1000 at 2.5 V [10], [11]. And the enhancement and depletion modes of MOSFET were used to prepare NDR device to increase PVCR to 10 7 at 1.6 V [12].…”

Section: Introductionmentioning

confidence: 99%

Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

et al. 2019

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To prepare a desired negative differential resistance (NDR) device by standard complementary-metal-oxide-semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was designed and fabricated by using the Si-base standard 0.18 μm CMOS process without any process modification and a special substrate. In order to reduce the valley current under optical control, a metal mask was added to the NDR device. The results show that the device exhibits good NDR characteristics under either voltage-control or photo-control. Under voltage-control, a low volley current (0.23 pA) and a high peak-to-valley current ratio (1.4 × 10 10 ) are obtained at less than 1 V. Under photo-control, the two parameters obtained at less than 0.5 V, are 37 nA and 4827, respectively. Also, the device displays fine S-type NDR characteristics and nice maintaining response function under photo-control. These superior photoelectric NDR characteristics endow the device with greatly potential application in the photoelectric logic circuits.

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Bistable gated bipolar device

Cited by 20 publications

References 13 publications

Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

Theoretical Prediction of Semiconductor-Free Negative Differential Resistance Tunnel Diodes with High Peak-to-Valley Current Ratios Based on Two-Dimensional Cold Metals

Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

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