Bistable defect in mega-electron-volt proton implanted 4H silicon carbide

Abstract

Deep levels by proton and electron irradiation in 4H-SiC J. Appl. Phys. 98, 053706 (2005); 10.1063/1.2014941 Electrically active defects in irradiated 4H-SiC J. Appl. Phys. 95, 4728 (2004); 10.1063/1.1689731Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar + implantation

Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

“…The bistable M-center with its two configurations A and B is detected. As discussed by Martin et al 8,9 and as can be seen from Fig. 1, the M-center is superimposing the EH1, Z 1=2 , and EH3 peaks.…”

“…The amplitudes are similar for M1 and M2 and slightly less for M3 because M2 and M3 are overlapping and thus partly cancel out during subtraction. Martin et al 8 and Nielsen et al, 10 attributed M1 and M3 to the same defect configuration but different charge states and M2 to another defect configuration. Because the M-center is detected after low-energy irradiation, it may be attributed to carbon related defects.…”

“…The origin of these peaks were attributed to a highly mobile defect, recombining at rather low temperatures. In 2 MeV proton-implanted n-type 4H-SiC, a bistable defect, the M-center, 8 was observed. The defect has two configurations A and B.…”

Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC

“…There have been several investigations on both high-energy irradiated [18][19][20][21][22][23] and low-energy irradiated [24][25][26] SiC. In a recent study [15], we discussed the annealing of EH1, EH3 and the bistable M-center, which was discovered and labelled by Martin et al [12], as well as the related formation of the bistable EB-centers in low-energy irradiated SiC, which were discovered and labelled by Beyer et al [14]. Finally, the annihilation of the EB-centers at about 700 • C and their association with carbon interstitials and/or related complexes were reported.…”

“…Recently, several bistable [12][13][14][15] and multistable [16] defects have also been reported in the SiC for its polytypes 4H-and 6H-SiC, respectively. In 6H-SiC, Hemmingsson et al [16] investigated a metastable defect with three different configurations.…”