Capacitance transient study of a bistable deep level in e<sup>−</sup>-irradiated n-type 4H–SiC

Beyer, Franziska Christine; Hemmingsson, Carl; Pedersen, Henrik; Henry, Anne; Isoya, Junichi; Morishita, Norio; Ohshima, Takeshi; Janzén, Erik

doi:10.1088/0022-3727/45/45/455301

Cited by 22 publications

(17 citation statements)

References 31 publications

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“…The upward bending of the left side tail of the peak for the lowest two correlators suggest the presence of the Ti(h) defect at approximately E c -0.12 eV; however, its peak was not observed in the temperature range used. Peak #2 is the Z 1/2 center which appears in all 4H-SiC samples and has been strongly correlated to carbon vacancies as established by several annealing studies using DLTS and EPR [74][75][76]. Theoretical calculations and EPR measurements suggest that the identity of the three levels could be the (−2/0) transition of the cubic and (−1/0) transition of both the cubic and hexagonal site carbon vacancies [72,73,76,77].…”

Section: Thermally Stimulated Current (Tsc) Measurementsmentioning

confidence: 65%

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

2020

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Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolina (UofSC) on 8 × 8 mm 4H-SiC epitaxial layer wafers with an active area of ≈11 mm2. The thicknesses of the actual epitaxial layers were either 20 or 50 µm. The article reviews the investigation of defect levels in 4H-SiC epilayers and radiation detection properties of Schottky barrier devices (SBDs) fabricated in our laboratories at UofSC. Our studies led to the development of miniature SBDs with superior quality radiation detectors with highest reported energy resolution for alpha particles. The primary findings of this article shed light on defect identification in 4H-SiC epilayers and their correlation with the radiation detection properties.

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Section: Thermally Stimulated Current (Tsc) Measurementsmentioning

confidence: 65%

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

2020

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“…Beyer et al has also detected similar defect level (E c À 1.07 eV) in 2.5 MeV electron irradiated 4H-SiC. 38 EH 5 defect has been found in ion irradiated 4H-SiC and has been attributed to a carbon cluster. 31 The activation energy of Peak #5 was found to be 1.30 eV.…”

Section: Dlts Analysismentioning

confidence: 69%

Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Chaudhuri

Nguyen

Mandal

2014

Journal of Applied Physics

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Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 lm thick n-type 4H-SiC epitaxial layers containing Z 1/2 , EH 5 , and Ci1 deep levels were investigated. The device performance was evaluated on the basis of junction current/capacitance characterization and alpha pulse-height spectroscopy. Capacitance mode deep level transient spectroscopy revealed the presence of the above-mentioned deep levels along with two shallow level defects related to titanium impurities (Ti(h) and Ti(c)) and an unidentified deep electron trap located at 2.4 eV below the conduction band minimum, which is being reported for the first time. The concentration of the lifetime killer Z 1/2 defects was found to be 1.7 Â 10 13 cm À3. The charge transport and collection efficiency results obtained from the alpha particle pulse-height spectroscopy were interpreted using a drift-diffusion charge transport model. Based on these investigations, the physics behind the correlation of the detector properties viz., energy resolution and charge collection efficiency, the junction properties like uniformity in barrier-height, leakage current, and effective doping concentration, and the presence of defects has been discussed in details. The studies also revealed that the dominating contribution to the charge collection efficiency was due to the diffusion of charge carriers generated in the neutral region of the detector. The 10 mm 2 large area detectors demonstrated an impressive energy resolution of 1.8% for 5486 keV alpha particles at an optimized operating reverse bias of 130 V. V C 2014 AIP Publishing LLC. [http://dx

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“…This will be further supported by the thermal evolution of the defect population below. Moreover, electron irradiation experiments with energies below and above the Si displacement threshold [34,35] have shown that EH 4,5 only appear when V Si is created. Therefore, the Si vacancy is likely to be involved in their formation.…”

Section: B Correlating the C Si V C Defect And The Eh 45 Trapsmentioning

confidence: 99%

Conversion pathways of primary defects by annealing in proton-irradiated n -type 4H -SiC

et al. 2020

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The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence spectroscopy. A comprehensive model is suggested describing the evolution and interconversion of irradiation-induced point defects during annealing below 1000 • C. The model proposes the EH 4 and EH 5 traps frequently found by DLTS to originate from the (+/0) charge transition level belonging to different configurations of the carbon antisitecarbon vacancy (CAV) complex. Furthermore, we show that the transformation channel between the silicon vacancy (V Si ) and CAV is effectively blocked under n-type conditions, but becomes available in samples where the Fermi level has moved towards the center of the band gap due to irradiation-induced donor compensation. The annealing of V Si and the carbon vacancy (V C ) is shown to be dominated by recombination with residual self-interstitials at temperatures of up to 400 • C. Going to higher temperatures, a decay of the CAV pair density is reported which is closely correlated to a renewed increase of V C concentration. A conceivable explanation for this process is the dissociation of the CAV pair into separate carbon anitisites and V C defects. Lastly, the presented data supports the claim that the removal of free carriers in irradiated SiC is due to introduced compensating defects and not passivation of shallow nitrogen donors.

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Capacitance transient study of a bistable deep level in e⁻-irradiated n-type 4H–SiC

Cited by 22 publications

References 31 publications

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Conversion pathways of primary defects by annealing in proton-irradiated n -type 4H -SiC

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Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC

Cited by 22 publications

References 31 publications

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Conversion pathways of primary defects by annealing in proton-irradiated n -type 4H -SiC

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Capacitance transient study of a bistable deep level in e⁻-irradiated n-type 4H–SiC