Bistable behavior of silicon atoms in the (110) surface of gallium arsenide

Garleff, J. K.; Wijnheijmer, A. P.; Enden, C. N. v. D.; Koenraad, P. M.

doi:10.1103/physrevb.84.075459

Cited by 21 publications

(35 citation statements)

References 32 publications

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“…Their results are supported by the odd and even spatial symmetry, as well as similar spatial extent, of the two states appearing in the differential conductance maps at the corresponding energies [24]. Impurity states at the surface [40,41] are known to be quite different from those even a layer below the surface, which are much less sensitive to the influence of the surface [42,43]. The two states in our Figs.…”

Section: Discussionsupporting

confidence: 81%

Observation of the symmetry of core states of a single Fe impurity in GaAs

Bocquel¹,

Kortan²,

Campion³

et al. 2017

Phys. Rev. B

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Bocquel, J.; Kortan, V.R.; Campion, R.P.; Gallagher, B.L.; Flatté, M.E.; Koenraad, P.M. Published in:Physical Review B DOI:10.1103/PhysRevB.96.075207Published: 23/08/2017 Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We report the direct observation of two mid-gap core d states of differing symmetry for a single Fe atom embedded in GaAs. These states are distinguished by the strength of their hybridization with the surrounding host electronic structure. The midgap state of Fe that does not hybridize via σ bonding is strongly localized to the Fe atom, whereas the other, which does, is extended and comparable in size to other acceptor states. Tight-binding calculations of these midgap states agree with the spatial structure of the measured wave functions and illustrate that such measurements can determine the degree of hybridization via π bonding of impurity d states. These single-dopant midgap states with strong d character, which are intrinsically spin-orbit-entangled, provide an opportunity for probing and manipulating local magnetism and may be of use for high-speed electrical control of single spins.

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Section: Discussionsupporting

confidence: 81%

Observation of the symmetry of core states of a single Fe impurity in GaAs

Bocquel¹,

Kortan²,

Campion³

et al. 2017

Phys. Rev. B

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“…15 Electronic manipulation of dopant charge states has been predominately limited to ionization of Coulombically bound (shallow) donor and acceptor levels, 14,16 although switching a Si dopant between a substitutional and interstitial position with an associated charge change has also been demonstrated. 17 Electronic manipulation of tightly bound states, especially the spin-polarized core d electrons of transition-metal dopants, would permit a wider range of novel phenomena, including changing the core spin and magnetic interactions of a dopant. Such transitions have been measured optically for ensembles of transition-metal dopants in semiconductors, 18 and there is evidence of multiple d states associated with single transition-metal dopants embedded in the surface layer.…”

Section: Introductionmentioning

confidence: 99%

Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope

et al. 2013

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The incorporation of Fe in GaAs was studied by cross-sectional scanning tunneling microscopy (X-STM). The observed local electronic contrast of a single Fe atom is found to depend strongly on its charge state. We demonstrate that an applied tip voltage can be used to manipulate the valence and spin state of single Fe impurities in GaAs. In particular we can induce a transition from the (Fe 3+ ) 0 -3d 5 -isoelectronic state to the (Fe 2+ ) − -3d 6 -ionized acceptor state with an associated change of the spin moment. Fe atoms sometimes produce dark anisotropic features in topographic maps, which is consistent with an interference between different tunneling paths.[1] P.M. Koenraad and M. E. Flatté, Nature Materials 10, 91 (2011).

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“…Switching to Si − i is strongly dependent on the tunneling current and reaches a frequency of about 1 Hz for I = 250 pA. 10 The switching depends on the availability of electrons, which is favored by a high current just below the tip. At the same time, local TIBB repels electrons, which is also highest just below the tip.…”

Section: Resultsmentioning

confidence: 99%

“…This is because the energy provided by the electrons is not enough to relax the atom into a different lattice position, probably by either inelastic excitation of phonons or quantum tunneling. 10 Therefore, scanning at low bias voltage allows us to determine the charge state of the Si atom without the STM tip affecting it.…”

Section: Resultsmentioning

confidence: 99%

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Laser and voltage manipulation of bistable Si dopants in the GaAs (110) surface

2013

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Bistable behavior of single Si dopants in the (110) surface layer of GaAs was studied with a scanning tunneling microscope (STM). The Si atom acts as either a positively charged substitutional donor or a negatively charged interstitial. Its configuration can switch under the influence of a local biased STM tip. To independently manipulate the charge state, the sample was illuminated by a laser during STM operation. The Si atom can be reversibly switched between its positive and negative charge states by turning the laser on and off, respectively. This process occurs mostly with the photon energy tuned above the band gap of GaAs, indicating that photogenerated electron-hole pairs play an important role in the process. The occupation of the donor and interstitial configurations depends on the carrier dynamics, i.e., the possibility of the electrons to escape or to be captured. If the tip-induced band bending is large enough, it is possible for electrons to tunnel into the conduction band and the donor configuration is observed. Another escape path is created when the sample is illuminated and photogenerated holes can recombine with the bound electrons of the dopant.

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Bistable behavior of silicon atoms in the (110) surface of gallium arsenide

Cited by 21 publications

References 32 publications

Observation of the symmetry of core states of a single Fe impurity in GaAs

Observation of the symmetry of core states of a single Fe impurity in GaAs

Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope

Laser and voltage manipulation of bistable Si dopants in the GaAs (110) surface

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