Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance

Chen, Xiren; Song, Yuxin; Zhu, Liangqing; Qi, Zhen; Zhu, Liang; Zha, F. X.; Guo, Shaohui; Wang, Shumin; Shao, Jianda

doi:10.1088/0256-307x/32/6/067301

Cited by 7 publications

(3 citation statements)

References 18 publications

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“…By comparing the reduced effective mass and exciton radius of each PL process, they clarified that the interface of GaSbBi/AlGaSb QW is a terrace-like structure, due to the Bi-induced interfacial Al/Ga inter-diffusion. [20,21,25,29,44,74,149,161,165,168,185,188,190,205,212,[235][236][237].…”

Section: Spectral Broadening In Dilute Bismidesmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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Section: Spectral Broadening In Dilute Bismidesmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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“…Quasi-two-dimensional semiconductor-based quantum well and superlattice structures have extensively been investigated because of their potential applications in compact Terahertz emitters, cascade lasers, small-size detectors, etc. [1][2][3][4][5] A characteristic feature of the optical spectra of quantum well and superlattice systems at low temperatures is the occurrence of excitons. The exciton is often treated as a 'two-body' combination involving an electron and a hole between which there is Coulombic interaction.…”

Section: Introductionmentioning

confidence: 99%

Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well

Zheng

Cong

et al. 2016

Chinese Phys. B

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A series of GaAs/AlAs multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photoluminescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition emission of heavy-hole and light-hole free excitons is clearly observed and the transition energies are measured with different quantum well widths. In addition, a theoretical model of excitonic states in the quantum wells is used, in which the symmetry of the component of the exciton wave function representing the relative motion is allowed to vary between the two-and threedimensional limits. Then, within the effective mass and envelope function approximation, the recombination transition energies of the heavy-and light-hole excitons in GaAs/AlAs multiple-quantum wells are calculated each as a function of quantum well width by the shooting method and variational principle with two variational parameters. The results show that the excitons are neither 2D nor 3D like, but are in between in character and that the theoretical calculation is in good agreement with the experimental results.

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“…Regarding GaSb 1-x Bi x , only a few reports on the growth and properties of this material can be found in the literature. 11,12,[29][30][31][32][33][34][35][36][37][38][39] This is a completely new material system that has been first studied only a few years ago, 29,30,32,37,38 and first GaSbBi/GaSb QWs have been grown very recently. 11,39 Optical absorption and photoreflectance measurements indicate a bandgap reduction of 30-36 meV/% Bi.…”

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confidence: 99%

Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment

Kudrawiec

Kopaczek

Delorme

et al. 2019

Journal of Applied Physics

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To determine the band alignment at the GaSb 1-x Bi x /GaSb interface, a set of GaSb 1-x Bi x /GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi ≤ 12%) were grown by molecular beam epitaxy and investigated by photoreflectance (PR) spectroscopy. In PR spectra, the optical transitions related to both the ground and the excited states in the QW were clearly observed. It is a direct experimental evidence that the GaSb 1-x Bi x /GaSb QW is a type-I QW with a deep quantum confinement in both the conduction and valence bands. From the comparison of PR data with calculations of energies of QW transitions performed for the varying valence band offset (VBO), the best agreement between experimental data and theoretical calculations has been found for the VBO ∼50 ± 5%. A very similar VBO was obtained from ab initio calculations. These calculations show that the incorporation of Bi atoms into a GaSb host modifies both the conduction and valence band: the conduction-band position changes linearly at a rate of ∼15-16 meV per % Bi and the valence band position changes at a rate of ∼15-16 meV per % Bi. The calculated shifts of valence and conduction bands give the variation of VBO between GaSb 1-x Bi x and GaSb in the range of ∼48%-52%, which is in good agreement with conclusions derived from PR measurements. In addition, it has been found that the electron effective mass reduces linearly with the increase in Bi concentration (x): m GaSbBi eff ¼ m GaSb eff À 0:2x, where m GaSb eff is the electron effective mass of GaSb. Moreover, a strong photoluminescence (PL) was observed and a negligible Stokes shift (less than a few meV) between the PL peak and the fundamental transition in the PR spectrum was detected for all QWs at low temperatures. It means that the investigated QWs are very homogeneous, and the carrier localization for this alloy is very weak in contrast to other dilute bismides.

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Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance

Cited by 7 publications

References 18 publications

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well

Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment

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