Bismuth catalyzed growth of GaAsBi nanowires by metalorganic vapor phase epitaxy

Essouda, Y.; Fitouri, H.; Boussaha, R.; Elayech, N.; Rebey, A.; Jani, B. El

doi:10.1016/j.matlet.2015.03.071

Cited by 16 publications

(12 citation statements)

References 16 publications

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“…So far there have only been a few studies about Bi's influence on InAs quantum dots (QDs) as summarized in Table 7 [112,114,[251][252][253] while Bi incorporation in nanowires (NWs) has just been reported recently [254]. Owing to δ-like density of states and excellent carrier confinement in QDs, InAs QD lasers possess a number of favorable device performance such as low threshold current density, high temperature stability and large differential gain, making them attractive for high-speed telecom laser applications.…”

Section: Impact Of Bismuth On Nanostructuresmentioning

confidence: 99%

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Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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Section: Impact Of Bismuth On Nanostructuresmentioning

confidence: 99%

“…Recently, Bi was reported by Ishikawa's group to be a catalyst for growth of GaAsBi NWs using MOCVD [254]. The authors initially deposited Bi nano-islands on GaAs substrate at 420 • C and then reduced temperature to 385 or 400 • C for growth of GaAsBi NWs.…”

Section: Bismuth Catalyzed Growth Of Gaasbi Nanowiresmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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“…In the liquid phase, bismuth droplets are known to act as catalysts to the formation of GaAs-based nanostructures16171819, via the VLS mechanism. Knowledge of the destabilisation process16 and the movement of the Bi droplets (sometimes referred to as crawling, self-propagating or running), as well as the subsequent formation of in-plane structures, is vital to form a complete understanding of GaAsBi compound growth.…”

mentioning

confidence: 99%

“…Investigations utilising elemental bismuth to seed the VLS growth of III-V nano- or microstructures are limited161719, with studies often tending to focus on alternative material systems; Cd(Se,Te)20, PbTe21, SnS 2 22 and Si23 nanowires. Bismuth is a group V species, however it does not readily form a solid binary compound with Ga. Rather than being directly harmful to the electronic properties of the host, like silver- or gold-seed atom incorporation2425, bismuth alters the GaAs bandstructure262728.…”

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confidence: 99%

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Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

Steele

Lewis

Horvat

et al. 2016

Sci Rep

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Herein we investigate a (001)-oriented GaAs1−xBix/GaAs structure possessing Bi surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth, through the vapour-liquid-solid mechanism. Specifically, self-aligned “nanotracks” are found to exist trailing the Bi droplets on the sample surface. Through cross-sectional high-resolution transmission electron microscopy the nanotracks are revealed to in fact be elevated above surface by the formation of a subsurface planar nanowire, a structure initiated mid-way through the molecular-beam-epitaxy growth and embedded into the epilayer, via epitaxial overgrowth. Electron microscopy studies also yield the morphological, structural, and chemical properties of the nanostructures. Through a combination of Bi determination methods the compositional profile of the film is shown to be graded and inhomogeneous. Furthermore, the coherent and pure zincblende phase property of the film is detailed. Optical characterisation of features on the sample surface is carried out using polarised micro-Raman and micro-photoluminescence spectroscopies. The important light producing properties of the surface nanostructures are investigated through pump intensity-dependent micro-PL measurements, whereby relatively large local inhomogeneities are revealed to exist on the epitaxial surface for important optical parameters. We conclude that such surface effects must be considered when designing and fabricating optical devices based on GaAsBi alloys.

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