Bismuth alloying properties in GaAs nanowires

Ding, Lu; Lu, Pengfei; Cao, Huawei; Cai, Ningning; Yu, Zhongyuan; Gao, Tao; Wang, Shumin

doi:10.1016/j.jssc.2013.07.005

Cited by 7 publications

(6 citation statements)

References 29 publications

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“…The major contribution in PDOS spectrum in GaAs nanoribbon arises from orbital overlapping of p and d orbitals. Ding et al reported the PDOS spectrum of bismuth alloying properties in GaAs nanowires [17]. A similar trend in PDOS spectrum is observed as that of the present work.…”

Section: Density Of States Of Gaas Nanoribbonsupporting

confidence: 90%

“…Besides, the motivation of the GaAs nanoribbon, the literature survey was conducted; to date, most of the reported work is in the synthesis and characterization of GaAs. The alloying properties, electronic and magnetic properties of doped GaAs nanowires are reported by other workers [17][18][19][20][21][22]. The novel aspect of the present work is to design and study the electronic transport property of GaAs nanoribbon, which is similar to zigzag type graphene nanoribbon under different voltage bias condition.…”

Section: Introductionmentioning

confidence: 51%

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A first-principles study of transport properties of a gallium arsenide nanoribbon-based molecular device

Chandiramouli

2015

Materials Science in Semiconductor Processing

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Section: Density Of States Of Gaas Nanoribbonsupporting

confidence: 90%

Section: Introductionmentioning

confidence: 51%

A first-principles study of transport properties of a gallium arsenide nanoribbon-based molecular device

Chandiramouli

2015

Materials Science in Semiconductor Processing

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“…Optical properties, such as dielectric function, optical absorption spectra and reflectivity, enhance in the low energy range when the Bi concentration in GaAs is increasing. Besides, the Bi doped GaAs NW represents stability in the absorption coefficient at higher energies compared with the Bi doped GaAs bulk material [94].…”

Section: Gaasbimentioning

confidence: 99%

“…[87] Bicluster [88][89][90][91] Bi doped GaAs NWs [94] Bi 4+ ions [98] Bi NWs, Nanotubes [87] Bi cluster [88][89][90][91] Bi-doped GaAs NWs [94] …”

Section: Alnbimentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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“…Besides a large number of investigations into GaAsBi quantum well structures and some more recent work on quantum dot-like structures313233, detailed studies of GaAsBi nanostrucutres are limited1719343536. Sterzer et al 34.…”

mentioning

confidence: 99%

Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

Steele

Lewis

Horvat

et al. 2016

Sci Rep

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Herein we investigate a (001)-oriented GaAs1−xBix/GaAs structure possessing Bi surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth, through the vapour-liquid-solid mechanism. Specifically, self-aligned “nanotracks” are found to exist trailing the Bi droplets on the sample surface. Through cross-sectional high-resolution transmission electron microscopy the nanotracks are revealed to in fact be elevated above surface by the formation of a subsurface planar nanowire, a structure initiated mid-way through the molecular-beam-epitaxy growth and embedded into the epilayer, via epitaxial overgrowth. Electron microscopy studies also yield the morphological, structural, and chemical properties of the nanostructures. Through a combination of Bi determination methods the compositional profile of the film is shown to be graded and inhomogeneous. Furthermore, the coherent and pure zincblende phase property of the film is detailed. Optical characterisation of features on the sample surface is carried out using polarised micro-Raman and micro-photoluminescence spectroscopies. The important light producing properties of the surface nanostructures are investigated through pump intensity-dependent micro-PL measurements, whereby relatively large local inhomogeneities are revealed to exist on the epitaxial surface for important optical parameters. We conclude that such surface effects must be considered when designing and fabricating optical devices based on GaAsBi alloys.

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Bismuth alloying properties in GaAs nanowires

Cited by 7 publications

References 29 publications

A first-principles study of transport properties of a gallium arsenide nanoribbon-based molecular device

A first-principles study of transport properties of a gallium arsenide nanoribbon-based molecular device

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

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