Bipolar resistive switching behaviors in Cr-doped ZnO films

Xu, Ding Lin; Xiong, Ying; Tang, Ming; Zeng, Bai Wen; Li, Jing Qi; Liu, Liu; Li, Lin Qi; Yan, Shao An; Tang, Zehua

doi:10.1016/j.mee.2013.11.007

Cited by 31 publications

(15 citation statements)

References 18 publications

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“…Abundant amount of these defects may result in insufficient switching properties. Therefore, several attempts have been reported to improve ZnO as a switching layer, such as stacked with various metal electrodes [ 117 – 128 ], controlled its growth deposition [ 52 , 129 – 133 ], post-thermal treated [ 134 , 135 ], doped with various elements [ 56 , 85 – 87 , 90 , 91 , 110 , 136 – 152 ], and embedded/multilayered with various metalsor oxides [ 55 , 83 , 153 – 159 ].…”

Section: Reviewmentioning

confidence: 99%

“…Nevertheless, controlled deposition parameter and post-thermal treatment on resistive layer may be not as effective as doping technique to fully adjust the defect concentration. Various dopant elements, such as Al [ 137 , 175 , 176 ], B [ 177 ], Co [ 138 , 139 , 169 , 178 ], Cr [ 110 , 158 ], Cu [ 87 , 140 , 179 ], Fe [ 180 , 181 ], Ga [ 112 , 182 , 183 ], La [ 144 ], Li [ 184 , 185 ], Mg [ 55 , 111 , 145 , 186 – 190 ], Mn [ 91 , 146 – 148 , 191 – 195 ], N [ 56 , 149 ], Ni [ 196 ], S [ 197 ], Sn [ 90 , 198 ], Ta [ 199 ], Ti [ 150 , 151 ], V [ 85 ], and Zr [ 86 ], that have been reported may exhibit decent switching performance. ZnO-based RRAM with multi-element doping, such as Al-Sn [ 136 , 200 ], Ga-Sn [ 201 ], and In-Ga [ 141 – 143 , 202 – 208 ], is also proposed.…”

Section: Reviewmentioning

confidence: 99%

“…As the result, oxygen concentration and insulating behavior in resistive layer are increased and thus improve ON/OFF ratio [ 169 ]. However, excessive dopant may deteriorate switching cycles and stability performance [ 110 , 143 , 151 , 169 , 175 , 179 , 190 ]. The deterioration occurs due to the weakening of c-axis-textured structure after increasing dopant concentration [ 169 ].…”

Section: Reviewmentioning

confidence: 99%

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Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

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Section: Reviewmentioning

confidence: 99%

Section: Reviewmentioning

confidence: 99%

Section: Reviewmentioning

confidence: 99%

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Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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“…Due to the existence of the crystal lattice defects in the ZnO thin film, it is inevitable to form an n-type semiconductor. Utilizing impurity doping makes it possible for compensating the above introduced vacancies, and the properties of ZnO films can be improved significantly [20]. Increasing demand for the ZnO-based material with small amount of lattice defects have triggered a particular research attention to ZnO with doping impurities [20,21] having important effects on the physical properties of the II-VI oxide semiconductors such as electrical resistivity, piezoelectricity and crystal structure, etc.…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Zhao

et al. 2019

Materials

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A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

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“…As an important binary transition metal oxide, ZnO has been widely applied in electronics, optics, optoelectronics, spintronics, thin film transistors and so on because of its adjustable electrical, optical, even magnetic properties and facile preparations 19 – 24 . According to previous reports, ZnO host material has exhibited high performance on RS effect based on applying traditional electrical field as single stimulation 14 , 15 , 25 . However, with the quick development physical limits are gradually approached under single stimulation.…”

Section: Introductionmentioning

confidence: 95%

A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure

Lü

Yin

et al. 2017

Sci Rep

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In this work, a spot laser modulated resistance switching (RS) effect is firstly observed on n-type Mn-doped ZnO/SiO2/Si structure by growing n-type Mn-doped ZnO film on Si wafer covered with a 1.2 nm native SiO2, which has a resistivity in the range of 50–80 Ω∙cm. The I–V curve obtained in dark condition evidences the structure a rectifying junction, which is further confirmed by placing external bias. Compared to the resistance state modulated by electric field only in dark (without illumination), the switching voltage driving the resistance state of the structure from one state to the other, shows clear shift under a spot laser illumination. Remarkably, the switching voltage shift shows a dual dependence on the illumination position and power of the spot laser. We ascribe this dual dependence to the electric filed produced by the redistribution of photo-generated carriers, which enhance the internal barrier of the hetero-junction. A complete theoretical analysis based on junction current and diffusion equation is presented. The dependence of the switching voltage on spot laser illumination makes the n-type Mn-doped ZnO/SiO2/Si structure sensitive to light, which thus allows for the integration of an extra functionality in the ZnO-based photoelectric device.

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Bipolar resistive switching behaviors in Cr-doped ZnO films

Cited by 31 publications

References 18 publications

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure

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