Bipolar Poisson Solution for Independent Double-Gate MOSFET

Abraham, A.; Thakur, Pankaj; Mahapatra, Santanu

doi:10.1109/ted.2012.2223703

Cited by 5 publications

(2 citation statements)

References 10 publications

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“…In the strong inversion regime, the surface potential is underestimated by a few tens of millivolts, which corresponds to an overestimation of q 1 . Notice that the front interface potential dependence on back-gate voltage vanishes when the back interface becomes strongly inverted, which is correctly captured in our initial guess because of (21) and (22).…”

Section: A Initial Guessmentioning

confidence: 53%

“…We end up with a single equation that takes only two different forms (hyperbolic and trigonometric mode), since the sign of q does not matter, whereas four cases had to be distinguished to choose the input voltage equation in [10], [12], [13], and [22]. In addition, the choice between trigonometric and hyperbolic modes is governed by the sign of q 2 as obtained by (1).…”

Section: Unique Equation To Be Solvedmentioning

confidence: 99%

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Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model

Poiroux

Rozeau

Scheer

et al. 2015

IEEE Trans. Electron Devices

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A detailed presentation of the latest version of the Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of low-doped ultrathin body and buried oxide fully depleted silicon-oninsulator transistors in all bias configurations, including strong forward back bias. In this part, a full analytical calculation of interface potentials, valid for all regimes of independent doublegate device operation, is detailed. This analytical computation, which is the heart of Leti-UTSOI2, provides explicit expressions for all quantities required to build dc and ac core models.Index Terms-Analytical models, compact modeling, fully depleted silicon-on-insulator (FDSOI), independent double-gate, semiconductor device modeling, SPICE, ultrathin body and buried oxide (BOX), ultrathin body BOX (UTBB).

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Section: A Initial Guessmentioning

confidence: 53%