Bipolar ferromagnetic semiconductor with large magnetic moment: EuGe2 monolayer

Tunable electrical properties and multiple-phases of ferromagnetic GdS2, GdSe2 and Janus GdSSe monolayers

“…The Δ2/Δ3 of GdS 2 , GdSe 2 and GdSSe monolayers are 1.05/0.71, 0.96/0.47, and 1.03/0.51 eV, respectively. They are all large enough to block spin flipping and larger than the experimentally fabricated EuGe 2 monolayer (0.05 eV) 58,64 and the previously reported CoPtF 6 (0.02 eV), 65 which make GdS 2 , GdSe 2 and GdSSe monolayers excellent candidate materials for constructing bipolar field effect spin filters and spin valves.…”

Proximity Coupling of Graphene to a Submonolayer 2D Magnet

“…[8,9,38,44] In Eu/graphene, the missing moment has been attributed to a competition between FM and AFM states. [54] This competition is difficult to capture theoretically: electronic structure calculations of Eu-based 2D magnets predict simple FM states [33,34] which contradict the experiment. The FM/AFM competition arises irrespective of the atomic structure; it has been reported for 2D materials with different Eu structures: triangular, [8,9,38,41] different rectangular, [44] and more complex [55] lattices.…”

“…The Eu 2+ ions with the electron configuration 4 f 7 provide large magnetic moments of spin nature, the orbital contributions being negligible. Eu‐based compounds exhibit 2D and surface magnetism, in theory [ 32–34 ] and experiment. [ 8,9,35,36 ] Spin‐dependent properties in graphene via proximity effects have been demonstrated in the Gr/EuO [ 24 ] and Gr/EuS [ 37 ] heterostructures.…”

Intrinsic exchange bias state in silicene and germanene materials EuX2

“…58 The reduction of the magnetic moment is difficult to capture theoretically as demonstrated by recent studies of EuSi 2 59 and germanenebased metalloxenes. 60,61 Further experimental studies of magnetic metalloxenes may shed some light on the problem. In a similar manner, the graphene-based monolayer EuC 6 exhibits competition between AFM and FM states.…”