Binding energy of the free exciton in indium arsenide

Tang, P. J. P.; Pullin, M. J.; Phillips, Chris C.

doi:10.1103/physrevb.55.4376

Cited by 15 publications

(8 citation statements)

References 27 publications

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“…In the case of exciton recombination, it is instead lower than the bandgap energy by the free exciton binding energy, which should not differ much from that of the free exciton in bulk ZB InAs (1 meV). 42 However, in the case of InAs, native surface defects can pin the Fermi level above the conduction band edge, 43 thus giving rise to a surface accumulation layer and to a native n-doping. In the latter case, a fit would be required in order to determine precisely the bandgap energy, which is impeded here by the large, Gaussian broadening of the 477 meV band.…”

Section: Nano Lettersmentioning

confidence: 99%

Bandgap Energy of Wurtzite InAs Nanowires

et al. 2016

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InAs nanowires (NWs) have been grown on semi-insulating InAs (111)B substrates by metal-organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The pure wurtzite (WZ) phase of these NWs has been attested by high-resolution transmission electron microscopy and selected area diffraction pattern measurements. Low temperature photoluminescence measurements have provided unambiguous and robust evidence of a well resolved, isolated peak at 0.477 eV, namely 59 meV higher than the band gap of ZB InAs. The WZ nature of this energy band has been demonstrated by high values of the polarization degree, measured in ensembles of NWs both as-grown and mechanically transferred onto Si and GaAs substrates, in agreement with the polarization selection rules for WZ crystals. The value of 0.477 eV found here for the bandgap energy of WZ InAs agrees well with theoretical calculations.

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Section: Nano Lettersmentioning

confidence: 99%

Bandgap Energy of Wurtzite InAs Nanowires

et al. 2016

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“…Using the parameters given in Table 2, we thus obtain E b = 2 meV. This value does not differ from that of the free exciton in bulk ZB InAs (1 meV) [44]. Moreover, the exciton binding energy is in the 5-25 meV range for SK InAs/InP QDs [45,46].…”

Section: Resultsmentioning

confidence: 62%

“…The lower activation energy is associated to carrier recombination through defects in the quantum structures or their interfaces while the higher activation energy is compatible with the unipolar escape of carriers from the nanostructures to the matrix [43]. If we assume an isotropic dielectric constant, the WZ InAs exciton binding energy can be estimated using the following equation: (7) where ε(0) is the dielectric constant (15.15 for ZB InAs [44]), m e and m A are the electron and A-band hole effective masses that takes in account the existing anisotropy in the WZ InAs effective masses. Using the parameters given in Table 2, we thus obtain E b = 2 meV.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate

Alouane

Nasr

Khmissi

et al. 2021

Journal of Luminescence

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The emergence of semiconductor nanowires (NWs) as a new class of functional materials has generated a great interest in the scientific community in the fields of electronics, photonics and energy. In this work, we report on the optical properties of telecom-band emitting InAs/InP quantum rod-nanowires (QR-NWs) grown on silicon substrates by gold catalyst assisted molecular beam epitaxy (MBE). The energies of A and B band transitions in wurtzite InAs QRs are numerically evaluated by finite element method (FEM) as a function of the QR geometry and strain and compared with the experimental results obtained from photoluminescence (PL). Temperature-dependent optical properties of the QR-NWs are studied revealing that the integrated PL intensity keeps up to 30% of its value at 14 K which testify a high stability of the PL intensity. Furthermore, the investigated nanostructure shows a room temperature emission wavelength at 1.55 μm. These results demonstrate a great promise for telecom-band III-V nanoemitters monolithically grown on silicon.

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“…29,30 Indeed, during ion implantation, pairs of interstitial-vacancies are created due to cascades, the so-called IV pairs. Tight-binding MD simulations of Tang et al 31 report that under a certain condition, the IV-pair creates a metastable defect structure with an annihilation energy of 1.1 eV. Cargnoni et al 32 further confirm the energy barrier and also that IV-pair defect and the bond defect are closely related.…”

Section: The Amorphous Structurementioning

confidence: 93%

Atomistic modeling of the Ge composition dependence of solid phase epitaxial regrowth in SiGe alloys

Prieto-Depedro

Payet

Sklénard

et al. 2017

Journal of Applied Physics

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The solid phase epitaxial regrowth (SPER) of SiGe alloys has been studied using atomistic simulation techniques. Molecular Dynamics (MD) simulations reproduce the recrystallization process of amorphous structures created in two different ways: introducing atoms at random positions according to the crystalline density and carefully relaxing the structure; and using a bond switching algorithm by means of ab initio. Activation energies are confronted, and the first method is validated as an efficient way to generate amorphous-crystalline structures suitable to study SPER processes. The MD extracted results show that the SPER rate does not vary monotonically with the Ge composition; instead, activation energies reveal a non-linear behaviour with the addition of Ge, due to the two-part behaviour of the SPER rate: SPER rate itself and a hypothesized extra strain due to the bond length difference. Since SPER is a thermally activated process, nudged elastic band calculations are carried out in order to extend the previous assumption. The energy barrier for an atom to attach to the crystalline phase is computed. The extracted values confirm the presence of the mentioned strain contribution required for an atom to recrystallize when it is not as the same type of the bulk.

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Binding energy of the free exciton in indium arsenide

Cited by 15 publications

References 27 publications

Bandgap Energy of Wurtzite InAs Nanowires

Bandgap Energy of Wurtzite InAs Nanowires

Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate

Atomistic modeling of the Ge composition dependence of solid phase epitaxial regrowth in SiGe alloys

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