Binding energy of an off‐centre hydrogenic donor impurity in a spherical quantum dot

Abstract

PACS 71.55.-i, 73.21.La A variational calculation is given of the binding energy of an off-centre hydrogenic donor impurity placed in a spherical quantum dot. The study is restricted to the ground state binding energy in the quantum dot. The cases of both infinite and finite confining potentials are considered. The variation of the binding energy as a function of the dot radius and as a function of the impurity position has been investigated. In the case of high finite confining potentials, the initial deviation of the binding energy from the result of infinite potential has been derived. The critical impurity location at which the deviation in the binding energy due to any finite confining potential changes its sign has been determined. The maximum binding energy and the dot radius at which it occurs have further been calculated for any confining potential or any impurity location.

Acceptor and donor impurities in GaN nanocrystals

“…This monotonously decreasing binding energy is comparable to that calculated in Ref. 29. From the experimental point of view, our results show that the acceptor-doped NC's are less sensitive to the impurity position than the donor-doped NC's.…”

“…Theoretically, spherical NC's containing a substitutional impurity have been investigated previously. [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] Both donors and acceptors have been studied within a variational approach (VA) 20 and the effective-mass approximation (EMA). [16][17][18][19][21][22][23][24][25][26][27]29 Acceptors have also been treated in the atomistic framework: Effective bondorbital 15 and tight-binding (TB) 28 models.…”

Asymptotic Iteration Method in Single and Multilayered Quantum Dots

“…The comparison indicated that the present results are very reasonable. They are distinguished by exhibiting a peak similar to the results obtained before by applying a variational method in analogous problems (Mikhail and Ismail [7,25] and Mikhail and El Sayed [8,9]).…”

Off‐center shallow donors in a spherical Si quantum dot with dielectric border

“…A similar effect of the donor position on the energy was observed for P-doped Si nanodots [33] with R > 2 nm. This is a typical behavior for spherical QDs [34,35], and it explains why the center of the nanocrystal for these structures is energetically favorable.…”